Display device
First Claim
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1. A semiconductor device comprising:
- an insulating substrate;
a semiconductor layer above the insulating substrate;
a first electrode layer and a second electrode layer which are electrically connected to the semiconductor layer;
a first metal layer opposed to a first surface of the semiconductor layer;
a first insulating layer between the first metal layer and the semiconductor layer;
a second metal layer opposed to a second surface of the semiconductor layer;
a second insulating layer between the second metal layer and the semiconductor layer;
a third metal layer electrically connecting the first metal layer and the second metal layer via one contact hole penetrating the first insulating film and the second insulating film, whereinthe first electrode layer, the second electrode layer, and the third metal layer are all formed of the same material, andthe third metal layer directly contacts a top surface and a side surface of the second metal layer and a top surface of the first metal layer.
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Abstract
According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.
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Citations
5 Claims
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1. A semiconductor device comprising:
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an insulating substrate; a semiconductor layer above the insulating substrate; a first electrode layer and a second electrode layer which are electrically connected to the semiconductor layer; a first metal layer opposed to a first surface of the semiconductor layer; a first insulating layer between the first metal layer and the semiconductor layer; a second metal layer opposed to a second surface of the semiconductor layer; a second insulating layer between the second metal layer and the semiconductor layer; a third metal layer electrically connecting the first metal layer and the second metal layer via one contact hole penetrating the first insulating film and the second insulating film, wherein the first electrode layer, the second electrode layer, and the third metal layer are all formed of the same material, and the third metal layer directly contacts a top surface and a side surface of the second metal layer and a top surface of the first metal layer. - View Dependent Claims (2, 3, 4, 5)
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Specification