Chamber with flow-through source
First Claim
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1. An inductively coupled plasma source comprising:
- a plate comprising a dielectric material and at least partially defining a channel; and
a conductive material seated within the channel, wherein the conductive material is characterized by a spiral or coil configuration, wherein the conductive material is coupled with an RF source, wherein the dielectric material defines apertures through the inductively coupled plasma source, and wherein the conductive material is positioned about the apertures within the dielectric material.
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Abstract
Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.
2035 Citations
19 Claims
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1. An inductively coupled plasma source comprising:
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a plate comprising a dielectric material and at least partially defining a channel; and a conductive material seated within the channel, wherein the conductive material is characterized by a spiral or coil configuration, wherein the conductive material is coupled with an RF source, wherein the dielectric material defines apertures through the inductively coupled plasma source, and wherein the conductive material is positioned about the apertures within the dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An inductively coupled plasma source comprising:
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a first plate comprising a dielectric material and at least partially defining a channel; and a conductive material seated within the channel, wherein the conductive material extends continuously through the dielectric material from a first position along a radial edge of the first plate where the conductive material enters the first plate to a second position along the radial edge of the first plate where the conductive material exits the first plate, and wherein the conductive material is coupled with an RF source. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. An inductively coupled plasma source comprising:
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a plate defining at least a portion of a channel within the plate, wherein the plate comprises a dielectric material; and a conductive material seated within the at least a portion of the channel, wherein the conductive material is characterized by a spiral or coil configuration, wherein the conductive material extends continuously through the dielectric material from a first position along a radial edge of the plate where the conductive material enters the plate to a second position along the radial edge of the plate where the conductive material exits the plate, wherein the conductive material is characterized by a coil pattern extending vertically about a central axis of the plate for at least two turns, and wherein the conductive material is coupled with an RF source. - View Dependent Claims (19)
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Specification