Optical emission spectroscopic techniques for monitoring etching

• US 10,541,184 B2
• Filed: 07/11/2017
• Issued: 01/21/2020
• Est. Priority Date: 07/11/2017
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Jung, Soonwook, Park, Soonam, Lubomirsky, Dmitry
• Primary Examiner(s): Pham, Thomas T
• Application Number:
  US15/646,845
• Publication Number:
  US 20190019734A1
• Time in Patent Office: 924 Days
• CPC Class Codes: G01N 21/31 Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry G01N21/72 takes precedence
• CPC Class Codes: G01N 21/67 using electric arcs or discharges
• CPC Class Codes: H01J 37/32972 Spectral analysis
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

Embodiments may include a method of etching. The method may also include flowing a gas mixture through a plasma discharge to form plasma effluents. The method may further include flowing the plasma effluents through a plurality of apertures to a layer on a substrate. The layer may have a first thickness. In addition, the method may include etching the layer with the plasma effluents. The method may also include measuring the intensity of emission from a reaction of plasma effluents with the layer. The method may further include summing the intensity of the emission while the plasma effluents are being flowed to the layer to obtain an integrated intensity. The method may then include comparing the integrated intensity to a reference value corresponding to a target etch thickness. The method may include extinguishing the plasma discharge when the integrated intensity is equal to or greater than the reference value.

Claims

1. A method of etching, the method comprising:

striking a plasma discharge;

flowing a gas mixture comprising a hydrogen-containing gas and helium through the plasma discharge to form plasma effluents;

flowing the plasma effluents through a plurality of apertures to a silicon layer on a substrate, the silicon layer having a first thickness;

etching the silicon layer with the plasma effluents;

measuring the intensity of emission from hydrogen from a reaction of plasma effluents with the silicon layer;

measuring the intensity of emission from helium in the plasma effluents;

integrating the intensity of the emission from helium over the duration the plasma effluents are being flowed to the silicon layer to obtain an integrated intensity of helium;

integrating the intensity of the emission from hydrogen over the duration the plasma effluents are being flowed to the silicon layer to obtain an integrated intensity of hydrogen;

calculating a parameter from the integrated intensity of hydrogen and the integrated intensity of helium;

comparing the parameter to a reference value corresponding to a target thickness of silicon etched;

extinguishing the plasma discharge when the integrated intensity is equal to or greater than the reference value to define a partially etched silicon layer on the substrate having a second thickness less than the first thickness.

2. The method of claim 1, wherein the second thickness is less than or equal to the first thickness minus the target thickness.

3. The method of claim 1, wherein the emission from hydrogen comprises emission at 656.3 nm.

4. The method of claim 1, wherein integrating the intensity of the emission from helium is over the entire duration of the plasma effluents being flowed to the layer.

5. The method of claim 4, wherein the entire duration is in a range from 60 seconds to 600 seconds.

6. The method of claim 1, further comprising obtaining the reference value from a calibration curve relating integrated intensity to target thickness or calculating the reference value from an equation relating integrated intensity to target thickness.

7. The method of claim 1, further comprising:

reacting plasma effluents with the layer at a pressure greater than or equal to 1 Torr.

8. The method of claim 1, wherein a difference between the second thickness and the first thickness is within 10% of the target thickness.

9. The method of claim 1, wherein determining when to extinguish the plasma discharge excludes using emission from fluorine.

10. The method of claim 1, wherein:

flowing the plasma effluents through the plurality of apertures to the silicon layer is in a chamber, and

the method further comprising removing the substrate from the chamber after extinguishing the plasma discharge.

11. The method of claim 1, wherein the gas mixture comprises a fluorine-containing gas.

12. The method of claim 1, wherein the substrate is a silicon wafer.

13. A method of measuring an amount of a silicon layer etched with a plasma source, the method comprising:

measuring the intensity of emission from hydrogen from a reaction of plasma effluents with the silicon layer;

measuring the intensity of emission from helium in the plasma effluents;

integrating the intensity of the emission from helium over the duration that the plasma effluents are being flowed to the silicon layer to obtain an integrated intensity of helium;

integrating the intensity of the emission from hydrogen over the duration the plasma effluents are being flowed to the silicon layer to obtain an integrated intensity of hydrogen;

calculating a parameter from the integrated intensity of hydrogen and the integrated intensity of helium; and

measuring the amount of the silicon layer etched by comparing the parameter to a calibration curve.

14. The method of claim 13, wherein the emission from hydrogen is a wavelength associated with a species in the plasma effluents.

15. The method of claim 13, wherein the amount of the silicon layer etched is less than a thickness of the silicon layer before the plasma effluents are flowed to the silicon layer.

16. The method of claim 13, wherein integrating the intensity of the emission from hydrogen is over the entire duration of the plasma effluents being flowed to the silicon layer.

17. The method of claim 13, wherein the calibration curve relates previously obtained intensity values with etch amounts.

18. The method of claim 13, wherein the silicon layer is on top of a silicon wafer.