Apparatuses and methods for semiconductor die heat dissipation

• US 10,541,229 B2
• Filed: 02/19/2015
• Issued: 01/21/2020
• Est. Priority Date: 02/19/2015
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Vadhavkar, Sameer S., Li, Xiao, Chandolu, Anilkumar
• Primary Examiner(s): Naraghi, Ali
• Application Number:
  US14/626,575
• Publication Number:
  US 20160247742A1
• Time in Patent Office: 1,797 Days
• Field of Search: None
• CPC Class Codes: H01L 2225/06565 the devices having the same size and there being no auxiliary carrier between the devices
• CPC Class Codes: H01L 2225/06568 the devices decreasing in size, e.g. pyramidical stack
• CPC Class Codes: H01L 2225/06589 Thermal management, e.g. cooling
• CPC Class Codes: H01L 23/367 Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/42 Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/16235 Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
• CPC Class Codes: H01L 2924/16251 Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate

Abstract

Apparatuses and methods for semiconductor die heat dissipation are described. For example, an apparatus for semiconductor die heat dissipation may include a substrate and a heat spreader. The substrate may include a thermal interface layer disposed on a surface of the substrate, such as disposed between the substrate and the heat spreader. The heat spreader may include a plurality of substrate-facing protrusions in contact with the thermal interface layer, wherein the plurality of substrate-facing protrusions are disposed at least partially through the thermal interface layer.

Claims

1. An apparatus, comprising:

a substrate;

a thermal interface layer disposed on a surface of the substrate; and

a heat spreader including a plurality of substrate-facing protrusions in contact with the thermal interface layer, wherein the plurality of substrate-facing protrusions are disposed at least partially through the thermal interface layer, and

wherein the heat spreader including the plurality of substrate-facing protrusions covers an entire surface of a top die of a stack of semiconductor die.

2. The apparatus of claim 1, wherein the plurality of substrate-facing protrusions are disposed through the thermal interface layer and are in contact with the substrate.

3. The apparatus of claim 1, wherein a subset of the plurality of substrate-facing protrusions are disposed through the thermal interface layer and are in contact with the substrate.

4. The apparatus of claim 1, wherein a thickness of the thermal interface layer under a face of the plurality of substrate-facing protrusions facing the substrate is thinner relative to a thickness of the thermal interface layer under areas of the heat spreader that have no substrate-facing protrusions.

5. The apparatus of claim 1, wherein the plurality of substrate-facing protrusions form an array of protrusions.

6. The apparatus of claim 1, wherein the substrate further includes a plurality of thermal dissipation pads, and wherein a substrate-facing protrusion of the plurality of substrate-facing protrusions is in contact with one or more of the plurality of thermal dissipation pads.

7. The apparatus of claim 1, wherein the plurality of substrate-facing protrusions are disposed through the thermal interface layer and are in substantially close proximity with the substrate with a small volume of the thermal interface layer between a bottom face of each of the plurality of substrate-facing protrusions and the substrate.

8. The apparatus of claim 1, wherein the substrate is a semiconductor die.

9. The apparatus of claim 8, wherein the semiconductor die is a memory die.

10. The apparatus of claim 1, wherein the plurality of substrate-facing protrusions extend from the heat spreader, and the heat spreader covers the terminal interface layer.

19. The apparatus of claim 10, wherein the internally-facing protrusions part of, and formed of, the same material as the heat spreader are disposed above the one stack of the semiconductor die.

11. An apparatus, comprising:

a substrate,

a semiconductor die on the substrate;

a plurality of thermal dissipation pads on a surface of the substrate and the semiconductor die;

a thermal interface layer disposed on the surface of the substrate that includes the plurality of thermal dissipation pads; and

a heat spreader including a plurality of internally-facing protrusions associated with one stack of the semiconductor die, wherein a distal end of the plurality of internal-facing protrusions are at least partially disposed within the thermal interface layer,

wherein the distal end of an internally-facing protrusion of the plurality of internally-facing protrusions is in contact with a thermal dissipation pad on the semiconductor die of the plurality of thermal dissipation pads, and

wherein the plurality of internally-facing protrusions associated with the one stack of the semiconductor die are part of, and are formed of, a same material as the heat spreader.

12. The apparatus of claim 11, wherein the plurality of thermal dissipation pads and the plurality of internally-facing protrusions are aligned.

13. The apparatus of claim 11, wherein the plurality of thermal dissipation pads are arranged in an array on the surface of the substrate.

14. The apparatus of claim 11, wherein the plurality of thermal dissipation pads includes a through-via bonding pad.

15. The apparatus of claim 14, wherein the plurality of internally-facing protrusions form an array and spaces between a subset of the plurality of internally-facing protrusions align with a through-via bonding pad.

16. The apparatus of claim 11, wherein a eutectic bond is formed between one or more of the plurality of internally-facing protrusions and one or more of the plurality of thermal dissipation pads.

17. The apparatus of claim 11, wherein a bottom die of the stack of semiconductor die extends beyond one or more of the other die in the stack of semiconductor die and includes an exposed portion.

18. The apparatus of claim 17, wherein the exposed portion of the bottom die includes a plurality of thermal dissipation pads, and wherein one or more of the internally-facing protrusions are in close proximity to or in contact with the exposed portion of the bottom die including one or more of the plurality of thermal dissipation pads.

20. An apparatus, comprising:

a heat spreader including a plurality of protrusions formed on a bottom side of the heat spreader;

a stack of semiconductor die including a top die;

a thermal interface layer disposed between a surface of the top die and the bottom side of the heat spreader; and

a plurality of thermal dissipation pads on the surface of the top die,

wherein the heat spreader is disposed on the top die with the thermal interface layer between the bottom side of the heat spreader and the surface of the top die,

wherein the plurality of protrusions imbedded, at least partially, into the thermal interface layer are in contact with at least one of the plurality of thermal dissipation pads, and

wherein a bottom die of the stack of semiconductor die extends beyond one or more of other die in the stack of semiconductor die and a top surface of each exposed portion of the bottom die includes a plurality of thermal dissipation pads separated by corresponding portions of a thermal interface layer.

21. The apparatus of claim 20, wherein one or more of the plurality of protrusions extend through the thermal interface layer and are in contact with the surface of the top die.

22. The apparatus of claim 20, wherein one or more of the plurality of protrusions are in contact with one or more of the plurality of thermal dissipation pads.

23. The apparatus of claim 20, wherein the heat spreader comprises a conformal lid.

24. The apparatus of claim 23, wherein the hea spreader forms part of a package for the stack of semiconductor die.