Three-dimensional magnetic memory devices

• US 10,541,268 B2
• Filed: 12/28/2017
• Issued: 01/21/2020
• Est. Priority Date: 12/28/2017
• Status: Active Grant

• Current Assignee: Integrated Silicon Solution Incorporated (Uphill Investment Co.)
• Original Assignee: Spin Memory, Inc.
• Inventors: Gajek, Marcin, Tzoufras, Michail, Guarisco, Davide, Ryan, Eric Michael
• Primary Examiner(s): Hossain, Moazzam
• Assistant Examiner(s): Mojaddedi, Omar F
• Application Number:
  US15/857,574
• Publication Number:
  US 20190206931A1
• Time in Patent Office: 754 Days
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 52/00 Hall-effect devices integrated devices or assemblies of multiple devices H10N59/00
• CPC Class Codes: H10N 52/01 Manufacture or treatment

Abstract

A magnetic memory device is provided. The magnetic memory device includes: (i) a cylindrical core, (ii) a first cylindrical ferromagnetic layer that surrounds the cylindrical core, (iii) a spacer layer that surrounds the first cylindrical ferromagnetic layer, and (iv) a second cylindrical ferromagnetic layer that surrounds the spacer layer. The cylindrical core, the first cylindrical ferromagnetic layer, the spacer layer, and the second cylindrical ferromagnetic layer collectively form a magnetic tunnel junction.

Claims

1. A magnetic memory device comprising:

a cylindrical core;

a first cylindrical ferromagnetic layer that surrounds the cylindrical core;

a spacer layer that surrounds the first cylindrical ferromagnetic layer; and

a second cylindrical ferromagnetic layer that surrounds the spacer layer, wherein the cylindrical core, the first cylindrical ferromagnetic layer, the spacer layer, and the second cylindrical ferromagnetic layer collectively form a magnetic tunnel junction, wherein;

the first cylindrical ferromagnetic layer has a first set of characteristics; and

the second cylindrical ferromagnetic layer has a second set of characteristics that at least partially differ the first set of characteristics;

a magnetic ground state of the first and second cylindrical ferromagnetic layers is based, at least in part, on the first and second sets of characteristics of the first and second cylindrical ferromagnetic layers, respectively; and

the first and second sets of characteristics include;

(i) thicknesses of the first and second cylindrical ferromagnetic layers and (ii) heights of the first and second cylindrical ferromagnetic layers, respectively.

2. The magnetic memory device of claim 1, wherein the magnetic ground state is one of:

(i) an in-plane ground state, (ii) an out-of-plane ground state, or (iii) a vortex ground state.

3. The magnetic memory device of claim 1, wherein the magnetic ground state of the first and second cylindrical ferromagnetic layers is further based on characteristics of the cylindrical core.

4. The magnetic memory device of claim 3, wherein the characteristics of the cylindrical core include:

(i) a radius of the cylindrical core and (ii) a height of the cylindrical core.

5. The magnetic memory device of claim 1, wherein:

the first cylindrical ferromagnetic layer is a storage layer; and

the second cylindrical ferromagnetic layer is a reference layer.

6. The magnetic memory device of claim 1, wherein:

the first cylindrical ferromagnetic layer is a reference layer; and

the second cylindrical ferromagnetic layer is a storage layer.

7. The magnetic memory device of claim 1, wherein:

the cylindrical core is a non-magnetic metal; and

the cylindrical core is configured to receive a current.

8. The magnetic memory device of claim 7, wherein:

the received current flows radially through the first cylindrical ferromagnetic layer and the spacer layer towards the second cylindrical ferromagnetic layer; and

radial flow of the current imparts a spin torque at least on a magnetization of the first cylindrical ferromagnetic layer.

9. The magnetic memory device of claim 8, wherein the magnetization of the first cylindrical ferromagnetic layer changes from a first direction to a second direction when the current satisfies a threshold.

10. The magnetic memory device of claim 9, wherein:

the first direction is a first chirality; and

the second direction is a second chirality opposite to the first chirality.

11. The magnetic memory device of claim 1, wherein the spacer layer insulates the first cylindrical ferromagnetic layer from the second cylindrical ferromagnetic layer.

12. The magnetic memory device of claim 1, wherein the cylindrical core, the first cylindrical ferromagnetic layer, the spacer layer, and the second cylindrical ferromagnetic layer are coaxial with one another.

13. The magnetic memory device of claim 1, further comprising:

a first terminal lead connected to the cylindrical core; and

a second terminal lead connected to the second cylindrical ferromagnetic layer.

14. The magnetic memory device of claim 1, wherein:

a magnetization direction of the first cylindrical ferromagnetic layer mirrors a magnetization direction of the second cylindrical ferromagnetic layer when the magnetic memory device is in a first resistance state; and

the magnetization direction of the first cylindrical ferromagnetic layer is opposite the magnetization direction of the second cylindrical ferromagnetic layer when the magnetic memory device is in a second resistance state.

15. The magnetic memory device of claim 14, wherein:

the first and second cylindrical ferromagnetic layers are magnetized along an axis when each layer is in a first magnetic ground state; and

the first and second cylindrical ferromagnetic layers are magnetized about the axis when each layer is in a second magnetic ground state different from the first magnetic ground state.

16. The magnetic memory device of claim 1, wherein heights of the cylindrical core, the first cylindrical ferromagnetic layer, the spacer layer, and the second cylindrical ferromagnetic layer substantially match one another.

17. The magnetic memory device of claim 1, wherein:

the first and second cylindrical ferromagnetic layers are in a first magnetic state when a ratio between respective heights and thicknesses of the two layers satisfy a threshold; and

the first and second cylindrical ferromagnetic layers are in a second magnetic state when the ratio between the respective heights and thicknesses of the two layers do not satisfy the threshold.