Method for fabricating drive circuit and organic light-emitting diode display each having switching transistor without etch stopping layer on oxide semiconductor
First Claim
1. A method for fabricating a drive circuit, comprising:
- providing a substrate;
forming a first gate and a second gate on the substrate;
forming a gate dielectric layer to cover the first gate and the second gate;
forming a first semiconductor layer and a second semiconductor layer above the gate dielectric layer, wherein the first semiconductor layer corresponds to the first gate and is made of an oxide semiconductor material, and the second semiconductor layer corresponds to the second gate and is made of an oxide semiconductor material;
forming, above the first semiconductor layer, an etch stopping layer;
after the etch stopping layer is formed, forming a driving transistor by forming a first source and a first drain respectively on two sidewalls of the first semiconductor layer and two ends of the etch stopping layer;
forming a switching transistor by forming a second source and a second drain respectively on two sides of the second semiconductor layer, wherein the first source of the driving transistor is disposed directly from one end of the etch stopping layer to one of the two sidewalls of the first semiconductor layer, wherein the first drain of the driving transistor is disposed directly from another end of the etch stopping layer to another sidewall of the first semiconductor layer, wherein both the first source and the first drain are in direct contact with the gate dielectric layer; and
forming a dielectric layer to cover the driving transistor and the switching transistor.
1 Assignment
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Accused Products
Abstract
A drive circuit, an organic light-emitting diode display, and methods for fabricating the same are provided. The drive circuit includes: a driving transistor, including a first gate, a first semiconductor layer disposed above the first gate, an etch stopping layer disposed on the first semiconductor layer, and a first source and a first drain which are disposed on the two sides of the first semiconductor layer, the first semiconductor layer being made of oxide semiconductor material; and a switching transistor, including a second gate, a second semiconductor layer disposed above the second gate, and a second source and a second drain which are disposed on two sides of the second semiconductor layer, the second semiconductor layer being made of oxide semiconductor material. In the drive circuit, reliability and uniformity of the drive transistors are improved, and parasitic capacitance of the switching transistor decreases.
4 Citations
6 Claims
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1. A method for fabricating a drive circuit, comprising:
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providing a substrate; forming a first gate and a second gate on the substrate; forming a gate dielectric layer to cover the first gate and the second gate; forming a first semiconductor layer and a second semiconductor layer above the gate dielectric layer, wherein the first semiconductor layer corresponds to the first gate and is made of an oxide semiconductor material, and the second semiconductor layer corresponds to the second gate and is made of an oxide semiconductor material; forming, above the first semiconductor layer, an etch stopping layer; after the etch stopping layer is formed, forming a driving transistor by forming a first source and a first drain respectively on two sidewalls of the first semiconductor layer and two ends of the etch stopping layer; forming a switching transistor by forming a second source and a second drain respectively on two sides of the second semiconductor layer, wherein the first source of the driving transistor is disposed directly from one end of the etch stopping layer to one of the two sidewalls of the first semiconductor layer, wherein the first drain of the driving transistor is disposed directly from another end of the etch stopping layer to another sidewall of the first semiconductor layer, wherein both the first source and the first drain are in direct contact with the gate dielectric layer; and forming a dielectric layer to cover the driving transistor and the switching transistor. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification