Surface-emitting device, vertical external-cavity surface-emitting laser, and method for manufacturing surface-emitting device
First Claim
1. A surface-emitting device for an excitation medium of a vertical external-cavity surface-emitting laser, the surface-emitting device comprising:
- a base substrate made of GaN and c-axis oriented; and
an emitter structure formed of a group 13 nitride semiconductor and provided on said base substrate,whereinsaid base substrate is an oriented polycrystalline free-standing substrate,said emitter structure is formed of a plurality of unit deposition parts, and each of said plurality of unit deposition parts is provided on said base substrate and includes a DBR layer having a distributed Bragg reflection structure and an active layer that has a multiple quantum well structure and generates excitation emission in response to irradiation with external laser light,wherein a c-axis orientation of each of said plurality of unit deposition parts conforms to the c-axis orientation of said base substrate located directly below said plurality of unit deposition parts, andwherein grooves are formed between said plurality of unit deposition parts, wherein the grooves are formed at random positions.
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Abstract
A vertical external-cavity surface-emitting laser (VECSEL) whose blueshift is reduced also in a high intensity range of emitted laser light is realized. A surface-emitting device for VECSEL includes a base substrate made of GaN and c-axis oriented, and an emitter structure formed of a group 13 nitride semiconductor and provided on the base substrate. The emitter structure is formed of unit deposition parts, each of which is provided on the base substrate and includes a DBR layer having a distributed Bragg reflection structure and an active layer that has a multiple quantum well structure and generates excitation emission in response to irradiation with external laser light. A c-axis orientation of each of the unit deposition parts conforms to the c-axis orientation of the base substrate located directly below the unit deposition parts. Grooves are formed between the unit deposition parts.
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Citations
19 Claims
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1. A surface-emitting device for an excitation medium of a vertical external-cavity surface-emitting laser, the surface-emitting device comprising:
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a base substrate made of GaN and c-axis oriented; and an emitter structure formed of a group 13 nitride semiconductor and provided on said base substrate, wherein said base substrate is an oriented polycrystalline free-standing substrate, said emitter structure is formed of a plurality of unit deposition parts, and each of said plurality of unit deposition parts is provided on said base substrate and includes a DBR layer having a distributed Bragg reflection structure and an active layer that has a multiple quantum well structure and generates excitation emission in response to irradiation with external laser light, wherein a c-axis orientation of each of said plurality of unit deposition parts conforms to the c-axis orientation of said base substrate located directly below said plurality of unit deposition parts, and wherein grooves are formed between said plurality of unit deposition parts, wherein the grooves are formed at random positions. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A vertical external-cavity surface-emitting laser comprising:
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an optical resonator including a surface-emitting device for an excitation medium, and a resonant mirror, and an excitation light source, said surface-emitting device including a base substrate made of GaN and c-axis oriented, and an emitter structure formed of a group 13 nitride semiconductor and provided on said base substrate, wherein said base substrate is an oriented polycrystalline free-standing substrate, said emitter structure is formed of a plurality of unit deposition parts, and each of said plurality of unit deposition parts is provided on said base substrate and includes a DBR layer having a distributed Bragg reflection structure and an active layer having a multiple quantum well structure, said excitation light source irradiates said active layer of said surface-emitting device with excitation laser light to cause said active layer to generate excitation emission, a c-axis orientation of each of said plurality of unit deposition parts conforms to the c-axis orientation of said base substrate located directly below said plurality of unit deposition parts, grooves are formed between said plurality of unit deposition parts, wherein the grooves are formed at random positions, and said resonant mirror resonates the excitation emission generated in said active layer between said DBR layer of said surface-emitting device and said resonant mirror. - View Dependent Claims (8)
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9. A method for manufacturing a surface-emitting device for an excitation medium of a vertical external-cavity surface-emitting laser, the method comprising the steps of:
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(a) preparing a base substrate made of GaN and c-axis oriented; and (b) forming an emitter structure formed of a group 13 nitride semiconductor on said base substrate, wherein said base substrate is an oriented polycrystalline free-standing substrate, in said step (b), said emitter structure is formed such that said emitter structure includes a plurality of unit deposition parts, each of which is provided on said base substrate and includes a DBR layer having a distributed Bragg reflection structure and an active layer that has a multiple quantum well structure and generates excitation emission in response to irradiation with external laser light, and grooves formed between said plurality of unit deposition parts, wherein the grooves are formed at random positions, and a c-axis orientation of each of said plurality of unit deposition parts conforms to the c-axis orientation of said base substrate located directly below said plurality of unit deposition parts. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A surface-emitting device comprising:
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a base substrate made of GaN and c-axis oriented; and an emitter structure formed of a group 13 nitride semiconductor and provided on said base substrate, wherein said base substrate is an oriented polycrystalline free-standing substrate, said emitter structure is formed of a plurality of unit deposition parts, and each of said plurality of unit deposition parts is provided on said base substrate and includes a DBR layer having a distributed Bragg reflection structure and an active layer that has a multiple quantum well structure and generates excitation emission in response to irradiation with external laser light, a c-axis orientation of each of said plurality of unit deposition parts conforms to the c-axis orientation of said base substrate located directly below said plurality of unit deposition parts, and grooves are formed between said plurality of unit deposition parts, wherein the grooves are formed at random positions. - View Dependent Claims (16, 17, 18, 19)
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Specification