Method of forming a silicon nitride film using Si—N containing precursors
First Claim
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1. A method for forming a SiN-containing film, the method comprising the steps of:
- delivering into a reactor containing a substrate a vapor including a Si-containing film forming composition comprising a Si—
N containing precursor having the formula H3Si(CH2)nSiH2N(R)C(Me)=NR, RN═
C(Me)N(R)SiH2(CH2)nSiH2N(R)C(Me)=NR,
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Abstract
Methods for forming a SiN-containing film are disclosed. The methods use film-forming compositions comprising Si—N containing precursors. Also disclosed are methods of synthesizing the same and methods of using the same for vapor deposition. In particular, a catalytic dehydrogenative coupling of carbosilanes with ammonia, amines and amidines produces the Si—N containing precursors.
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Citations
12 Claims
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1. A method for forming a SiN-containing film, the method comprising the steps of:
delivering into a reactor containing a substrate a vapor including a Si-containing film forming composition comprising a Si—
N containing precursor having the formula H3Si(CH2)nSiH2N(R)C(Me)=NR, RN═
C(Me)N(R)SiH2(CH2)nSiH2N(R)C(Me)=NR,- View Dependent Claims (2, 3, 4, 5, 6)
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7. A process for forming a Si—
- N containing compound having the formula having the formula H3Si(CH2)nSiH2N(R)C(Me)=NR, RN═
C(Me)N(R)SiH2(CH2)nSiH2N(R)C(Me)=NR, - View Dependent Claims (8, 9, 10, 11, 12)
- N containing compound having the formula having the formula H3Si(CH2)nSiH2N(R)C(Me)=NR, RN═
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