Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

• US 10,546,841 B2
• Filed: 03/27/2017
• Issued: 01/28/2020
• Est. Priority Date: 05/12/2009
• Status: Active Grant

• Current Assignee: Board of Trustees of The University of Illinois
• Original Assignee: Board of Trustees of The University of Illinois
• Inventors: Rogers, John A., Nuzzo, Ralph, Kim, Hoon-sik, Brueckner, Eric, Park, Sang Il, Kim, Rak Hwan
• Primary Examiner(s): Trinh, Michael M
• Application Number:
  US15/470,780
• Publication Number:
  US 20170200707A1
• Time in Patent Office: 1,037 Days
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68322 Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68354 used to support diced chips prior to mounting
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2221/68386 Separation by peeling
• CPC Class Codes: H01L 2224/8312 Aligning
• CPC Class Codes: H01L 2224/83868 Infrared [IR] curing
• CPC Class Codes: H01L 2224/83871 Visible light curing
• CPC Class Codes: H01L 2224/83874 Ultraviolet [UV] curing
• CPC Class Codes: H01L 2224/95001 involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2224/95085 being a liquid, e.g. for fluidic self-assembly
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/05432 Al2O3
• CPC Class Codes: H01L 2924/06 : Polymers polymers per se C08; polymer adhesives C09J
• CPC Class Codes: H01L 2924/12033 : Gunn diode
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/13063 : Metal-Semiconductor Field-Effect Transistor [MESFET]
• CPC Class Codes: H01L 2924/13064 : High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/2064 : larger or equal to 1 micron less than 100 microns
• CPC Class Codes: H01L 2924/20641 : larger or equal to 100 microns less than 200 microns
• CPC Class Codes: H01L 2933/0041 : relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 : relating to encapsulations
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/507 : the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/54 : having a particular shape
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: Y10S 438/977 : Thinning or removal of substrate

Abstract

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

Claims

1. An electronic device, comprising:

a handle substrate comprising an adhesion layer; and

a semiconductor epilayer bonded to the handle substrate by way of the adhesion layer,

wherein the handle substrate comprises a material different from the semiconductor epilayer;

wherein the semiconductor epilayer has an exposed contact surface on a side of the semiconductor epilayer opposite the handle substrate;

wherein the exposed contact surface is patterned with a mask to form exposed regions and one or more masked regions of the exposed contact surface; and

wherein the exposed regions have removed material undercutting the semiconductor epilayer, generating one or more at least partially released suspended semiconductor structures supported by anchors on the handle substrate, wherein the anchors are heterogeneous anchors made of a different material from the semiconductor epilayer.

2. The electronic device of claim 1, wherein the semiconductor epilayer is a GaN epilayer and the GaN epilayer is a multi-layer comprising at least one p-doped GaN semiconductor layer in electrical contact with at least one n-doped GaN semiconductor layer.

3. The electronic device of claim 1, wherein the one or more semiconductor structures are LED device structures.

4. The electronic device of claim 1, wherein the semiconductor epilayer is a first semiconductor epilayer, and comprising a second semiconductor epilayer bonded to the handle substrate, and wherein the first semiconductor epilayer is bonded to the second semiconductor epilayer so that the second semiconductor epilayer is disposed between the handle substrate and the first semiconductor epilayer and the first semiconductor epilayer is bonded to the handle substrate by means of the second semiconductor epilayer.

5. The method of claim 1, wherein the semiconductor epilayer is selected from the group consisting of:

a GaN layer, an InGaN layer, a GaAsN layer, an AlGaN layer, an AlGaAsN layer, a GaAs layer, an InGaAs layer, an AlGaAs layer, an AlGaAsP layer, a GaAsSbN layer and an InN layer; and

wherein said growth substrate is selected from the group consisting of;

sapphire, Si (111), SiC, ZnO, Si (100), MgAl2O4(100), MgAl2O4 (111), A-plane sapphire, M-plane sapphire, AlN, MnO, ZrB2, LiGaO2, (La,Sr)(Al,Ta)O3, LiAlO2, GaAs and InP.

6. The method of claim 1, wherein the semiconductor epilayer has a thickness selected from the range of 1 μ

m to 5 μ

m.

7. The method of claim 1, wherein the semiconductor epilayer is a multilayer comprising a plurality of semiconductor layers having different compositions, doping or both.

8. The method of claim 7, wherein the semiconductor epilayer is a multilayer comprising at least one p-type semiconductor layer in electrical contact with at least one n-type semiconductor layer.

9. The method of claim 7, wherein the multilayer comprises a plurality of LED device layers selected from the group consisting of:

contact layers, spreader layers, cladding layers and barrier layers.

10. The method of claim 7, wherein the multilayer comprises a plurality of GaN layers having different doping, thicknesses or both.

11. The method of claim 7, wherein the multilayer comprises at least one p-type GaN layer in electrical contact with at least one n-type GaN layer.

12. The method of claim 7, wherein the multilayer comprises a plurality of GaN layers selected from the group consisting of:

InGaN, GaN, AlGaN, GaN;

Mg, GaN;

Si, GaN;

AlN and GaN;

ZnO.

13. The method of claim 7, wherein the multilayer comprises a plurality of GaN layers corresponding to a vertical type GaN LED.