Substrate processing apparatus

• US 10,550,468 B2
• Filed: 02/01/2017
• Issued: 02/04/2020
• Est. Priority Date: 02/02/2016
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Kokusai Electric Corp.
• Inventors: Nakada, Takayuki, Taniyama, Tomoshi, Shirako, Kenji
• Primary Examiner(s): Moore, Karla A
• Application Number:
  US15/422,018
• Publication Number:
  US 20170218513A1
• Time in Patent Office: 1,098 Days
• Field of Search: None
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/4401 Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/67201 characterized by the construction of the load-lock chamber
• CPC Class Codes: H01L 21/67303 Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
• CPC Class Codes: H01L 21/67772 involving removal of lid, door, cover

Abstract

A substrate processing apparatus includes a transfer chamber; an upper gas supply mechanism for supplying a gas into an upper region of the transfer chamber through a first gas supply port; and a lower gas supply mechanism configured to supply the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber at a back surface of the first gas supply port; a pair of upper ducts at both sides of the first buffer chamber; and a first ventilation unit at lower ends of the pair of upper ducts. The lower gas supply mechanism includes a second buffer chamber at a back surface of the second gas supply port; a lower duct at lower surface of the second buffer chamber; and a second ventilation unit at a lower end of the lower duct.

Claims

1. A substrate processing apparatus comprising:

a transfer chamber where a substrate is transferred into a substrate retainer;

an upper gas supply mechanism configured to supply a gas into an upper region of the transfer chamber through a first gas supply port; and

a lower gas supply mechanism disposed under the upper gas supply mechanism and configured to supply the gas into a lower region of the transfer chamber through a second gas supply port,

wherein the upper gas supply mechanism comprises;

a first buffer chamber disposed at a back surface of the first gas supply port;

a pair of upper ducts disposed at both sides of the first buffer chamber; and

a first ventilation unit disposed at lower ends of the pair of upper ducts, and

the lower gas supply mechanism comprises;

a second buffer chamber disposed at a back surface of the second gas supply port;

a lower duct disposed at lower surface of the second buffer chamber; and

a second ventilation unit disposed at a lower end of the lower duct.

2. The substrate processing apparatus of claim 1, wherein the first ventilation unit comprises two ventilation units disposed at the lower ends of the pair of upper ducts to correspond to the pair of upper ducts, and the second ventilation unit disposed between the two ventilation units.

3. The substrate processing apparatus of claim 2, wherein the first buffer chamber is larger than the second buffer chamber.

4. The substrate processing apparatus of claim 3, wherein the pair of upper ducts extends from an upper end of the first buffer chamber along both sides of the second buffer chamber to the lower end of the lower duct.

5. The substrate processing apparatus of claim 3, wherein the lower duct has funnel shape when viewed from front.

6. The substrate processing apparatus of claim 5, wherein a cross-section of the upper duct gradually narrows toward an upper direction.

7. The substrate processing apparatus of claim 1, further comprising a gas dispersion unit disposed at one of the first gas supply port and the second gas supply port or both of the first gas supply port and the second gas supply port.

8. The substrate processing apparatus of claim 7, wherein the gas dispersion unit comprises:

a panel provided with third gas supply ports disposed on an entire surface thereof; and

a third buffer chamber disposed behind the panel.

9. The substrate processing apparatus of claim 8, wherein the panel is larger than the first gas supply port.

10. The substrate processing apparatus of claim 9, wherein the panel comprises a punched member provided with the third gas supply ports, and an opening ratio of a center portion of the panel is different from an opening ratio of a side portion of the panel.

11. The substrate processing apparatus of claim 10, wherein the opening ratio of the center portion is greater than the opening ratio of the side portion.

12. The substrate processing apparatus of claim 11, wherein an area of the center portion is same as an area of the first gas supply port.