Gas sensor

• US 10,551,314 B2
• Filed: 08/09/2018
• Issued: 02/04/2020
• Est. Priority Date: 09/27/2013
• Status: Active Grant

• Current Assignee: Asahi Kasei Microdevices Corporation (Asahi Kasei Corporation)
• Original Assignee: Asahi Kasei Microdevices Corporation (Asahi Kasei Corporation)
• Inventors: Camargo, Edson Gomes, Takehara, Satoshi
• Primary Examiner(s): Bryant, Rebecca C
• Application Number:
  US16/059,278
• Publication Number:
  US 20190072489A1
• Time in Patent Office: 544 Days
• CPC Class Codes: G01N 21/0303 Optical path conditioning in cuvettes, e.g. windows; adapted optical elements or systems; path modifying or adjustment G01N21/031 - G01N21/15 take precedence
• CPC Class Codes: G01N 21/031 Multipass arrangements
• CPC Class Codes: G01N 21/3504 for analysing gases, e.g. multi-gas analysis
• CPC Class Codes: G01N 21/61 Non-dispersive gas analysers G01N21/3504 takes precedence
• CPC Class Codes: G01N 2201/062 LED's
• CPC Class Codes: G01N 2201/068 Optics, miscellaneous
• CPC Class Codes: G01N 2201/12 Circuits of general importance; Signal processing
• CPC Class Codes: H01L 31/0304 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 31/167 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

Abstract

A small-size reliable gas sensor that can reduce a measurement error can be provided. The gas sensor includes a first light source; a first sensor unit and a second sensor unit disposed to receive light output from the first light source; a first substrate having a first principal surface on which the first light source and the first sensor unit are provided; and a second substrate having a first principal surface on which the second sensor unit is provided. The first sensor unit is disposed at a location where light output from the first light source and reflected on the second principal surface strikes the first principal surface of the first substrate.

Claims

1. A sensor for detecting a target substance comprising:

a first light source;

a first sensor unit and a second sensor unit disposed to receive light output from the first light source;

a first substrate having a first principal surface and a second principal surface opposite to the first principal surface, the first light source and the first sensor unit being provided on the first principal surface of the first substrate; and

a second substrate having a first principal surface and a second principal surface opposite to the first principal surface, the second sensor unit being provided on the first principal surface of the second substrate, wherein

the first sensor unit is disposed at a location where light output from the first light source and reflected on the second principal surface of the first substrate strikes the first principal surface of the first substrate, and

the first substrate and the second substrate are discrete parts and spatially separate from each other.

2. The sensor according to claim 1, wherein the sensor is a nondispersive infrared (NDIR) gas sensor.

3. The sensor according to claim 2, wherein a concentration of the target substance is obtained from amount of infrared rays absorbed by the target substance.

4. The sensor according to claim 1, further comprising:

a computation unit configured to receive an output signal from the first sensor unit and an output signal from the second sensor unit.

5. The sensor according to claim 4, wherein the output signal from the first sensor unit is a reference signal and the output signal from the second sensor unit is a signal that is changed in accordance with the target substance.

6. The sensor according to claim 4, wherein the computation unit is configured to calculate a concentration of the target substance based on a ratio of the output signal from the first sensor unit and the output signal from the second sensor unit.

7. The sensor according to claim 1, wherein the second sensor unit is disposed at a location where light output from the first light source radiates from the first substrate and strikes the second sensor unit.

8. The sensor according to claim 1, wherein the second sensor unit is disposed at a location where light output from the first light source passes through the inside of the second substrate, and strikes the second sensor unit.

9. The sensor according to claim 1, further comprising:

an optical filter disposed on an optical path from the first light source to the second sensor unit, the optical filter being transmissive only to a specific wavelength band.

10. The sensor according to claim 1, further comprising:

a cell includes an inlet for introducing the target substance, wherein

the second sensor unit is disposed at a location where light output from the first light source and then radiated into the cell, and strikes the second sensor unit.

11. The sensor according to claim 10, further comprising:

a light reflection unit disposed in the cell and configured to reflect light output from the first light source toward the second sensor unit.

12. The sensor according to claim 1, wherein the first substrate is a GaAs substrate.

13. The sensor according to claim 1, wherein the first light source and the first sensor unit have compound semiconductor laminates directly formed on the first principal surface of the first substrate respectively.

14. The sensor according to claim 1, wherein the first sensor unit and the second sensor unit are made of an identical material and have an identical laminated structure.

15. The sensor according to claim 14, wherein the laminated structure is a diode structure including at least two types of layers of a p-type semiconductor and an n-type semiconductor and includes indium or antimony.

16. The sensor according to claim 1, wherein

each of the first sensor unit and the second sensor unit includes a plurality of light-receiving portions having an identical structure.

17. The sensor according to claim 1, wherein the first light source, the first sensor unit and the second sensor unit have a Group III-V compound semiconductor respectively.

18. A sensor for detecting a target substance comprising:

a first light source;

a first sensor unit and a second sensor unit disposed to receive light output from the first light source;

a first substrate having a first principal surface and a second principal surface opposite to the first principal surface, the first light source and the first sensor unit being provided on the first principal surface of the first substrate; and

a second substrate having a first principal surface and a second principal surface opposite to the first principal surface, the second sensor unit being provided on the first principal surface of the second substrate, wherein

the first sensor unit is disposed at a location where light output from the first light source and reflected on the second principal surface of the first substrate strikes the first principal surface of the first substrate, and

the first substrate and the second substrate are disposed at a prescribed distance from each other.

19. The sensor according to claim 18, wherein the first substrate and the second substrate are disposed at a prescribed distance from each other so that to form a space outside the first substrate and second substrate, between an optical path from the first light source to the second sensor unit.

20. A sensor for detecting a target substance comprising:

a first light source;

a first sensor unit and a second sensor unit disposed to receive light output from the first light source;

a first substrate having a first principal surface and a second principal surface opposite to the first principal surface, the first light source and the first sensor unit being provided on the first principal surface of the first substrate; and

a second substrate having a first principal surface and a second principal surface opposite to the first principal surface, the second sensor unit being provided on the first principal surface of the second substrate, wherein

the first sensor unit is disposed at a location where light output from the first light source and reflected on the second principal surface of the first substrate strikes the first principal surface of the first substrate, and

the target substance is introduced into a space between an optical path from the first light source to the second sensor unit.