Laser-assisted electron-beam inspection for semiconductor devices
First Claim
1. An apparatus for laser-assisted electron-beam inspection, comprising:
- an electron-beam (e-beam) inspection device, comprising;
an e-beam source, configured to emit an incident e-beam;
a deflector, configured to deflect the incident e-beam to be projected onto a surface of a semiconductor device; and
an electron detector, configured to detect emergent electrons generated by the incident e-beam projected onto the surface; and
a laser illumination device, comprising;
a laser source, configured to generate a laser; and
a guiding device, configured to guide the laser to be projected onto the semiconductor device, wherein the laser changes the emergent electrons by a photovoltaic effect to cause, in a positive mode of the EBI apparatus, a PN junction of an N-type metal-oxide semiconductor (NMOS) of the semiconductor device to be in a conduction state, the guide device comprising;
a beam shaper, configured to shape the laser as a shaped laser to form a laser spot, wherein the laser spot is uniform and in a predetermined shape; and
a first reflector, arranged downstream the beam shaper and configured to reflect the shaped laser to the surface in a predetermined range of angles.
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Accused Products
Abstract
Methods and apparatuses for laser-assisted electron-beam inspection (EBI) are provided. The apparatus includes an EBI device and a laser illumination device. The EBI device includes an e-beam source configured to emit an incident e-beam, a deflector configured to deflect the incident e-beam to be projected onto a surface of a semiconductor device, and an electron detector configured to detect emergent electrons generated by the incident e-beam projected onto the surface. The laser illumination device includes a laser source configured to generate a laser, and a guiding device configured to guide the laser to be projected onto the semiconductor device. The laser changes the emergent electrons to cause, in a positive mode of the EBI apparatus, a PN junction of an NMOS of the semiconductor device to be in a conduction state.
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Citations
17 Claims
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1. An apparatus for laser-assisted electron-beam inspection, comprising:
an electron-beam (e-beam) inspection device, comprising; an e-beam source, configured to emit an incident e-beam; a deflector, configured to deflect the incident e-beam to be projected onto a surface of a semiconductor device; and an electron detector, configured to detect emergent electrons generated by the incident e-beam projected onto the surface; and a laser illumination device, comprising; a laser source, configured to generate a laser; and a guiding device, configured to guide the laser to be projected onto the semiconductor device, wherein the laser changes the emergent electrons by a photovoltaic effect to cause, in a positive mode of the EBI apparatus, a PN junction of an N-type metal-oxide semiconductor (NMOS) of the semiconductor device to be in a conduction state, the guide device comprising; a beam shaper, configured to shape the laser as a shaped laser to form a laser spot, wherein the laser spot is uniform and in a predetermined shape; and a first reflector, arranged downstream the beam shaper and configured to reflect the shaped laser to the surface in a predetermined range of angles. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for laser-assisted electron-beam inspection (EBI), comprising:
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configuring an EBI device of an apparatus to be in a positive mode; emitting, using an e-beam source of the EBI device, an incident e-beam; deflecting, using a deflector of the EBI device, the incident e-beam to be projected to a surface of a semiconductor device; detecting, with an electron detector of the EBI device, emergent electrons generated by the incident e-beam projected onto the surface of the semiconductor device; generating, using a laser illumination device of the apparatus, a laser; guiding, using a guiding device of the laser illumination device, the laser to be projected to the semiconductor device, wherein the laser changes the emergent electrons to cause a PN junction of the NMOS to be in a conduction state; and detecting, using the apparatus in a simultaneous manner, whether an open-circuit defect exist in a metal contact hole corresponding to a P-type metal-oxide semiconductor (PMOS) of a semiconductor device or a metal contact hole corresponding to an N-type metal-oxide semiconductor (NMOS) of the semiconductor device.
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Specification