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Laser-assisted electron-beam inspection for semiconductor devices

  • US 10,553,393 B2
  • Filed: 08/27/2018
  • Issued: 02/04/2020
  • Est. Priority Date: 04/27/2018
  • Status: Active Grant
First Claim
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1. An apparatus for laser-assisted electron-beam inspection, comprising:

  • an electron-beam (e-beam) inspection device, comprising;

    an e-beam source, configured to emit an incident e-beam;

    a deflector, configured to deflect the incident e-beam to be projected onto a surface of a semiconductor device; and

    an electron detector, configured to detect emergent electrons generated by the incident e-beam projected onto the surface; and

    a laser illumination device, comprising;

    a laser source, configured to generate a laser; and

    a guiding device, configured to guide the laser to be projected onto the semiconductor device, wherein the laser changes the emergent electrons by a photovoltaic effect to cause, in a positive mode of the EBI apparatus, a PN junction of an N-type metal-oxide semiconductor (NMOS) of the semiconductor device to be in a conduction state, the guide device comprising;

    a beam shaper, configured to shape the laser as a shaped laser to form a laser spot, wherein the laser spot is uniform and in a predetermined shape; and

    a first reflector, arranged downstream the beam shaper and configured to reflect the shaped laser to the surface in a predetermined range of angles.

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