Phototransistor with body-strapped base
First Claim
Patent Images
1. A photodetector structure, comprising:
- a substrate;
at least one phototransistor, the at least one phototransistor having a base, the base is directly connected to a metal interconnect through which the base is electrically connected to the substrate, but physically separated from the substrate; and
an n-type conductivity region adjacent to the substrate,wherein the substrate is of p-type conductivity, the at least one phototransistor is formed on the n-type conductivity region, and the metal interconnect is physically separated from the n-type conductivity region.
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Abstract
A photodetector includes a two-terminal bipolar phototransistor arranged on a substrate. The phototransistor includes a base, a collector, and an emitter. An electrical connection is made between the base and the local substrate near a region of the phototransistor. The electrical connection can be by way of metal interconnects.
179 Citations
12 Claims
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1. A photodetector structure, comprising:
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a substrate; at least one phototransistor, the at least one phototransistor having a base, the base is directly connected to a metal interconnect through which the base is electrically connected to the substrate, but physically separated from the substrate; and an n-type conductivity region adjacent to the substrate, wherein the substrate is of p-type conductivity, the at least one phototransistor is formed on the n-type conductivity region, and the metal interconnect is physically separated from the n-type conductivity region. - View Dependent Claims (2, 3, 4, 5)
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6. A method for fabricating a photodetector structure, comprising:
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forming an n-type buried layer on a p-type substrate; forming an n-type epitaxial layer of the buried layer; forming a p-type base layer on the epitaxial layer; forming an n-type emitter layer on a portion of the base layer; and forming a metal interconnect directly in contact with the base layer through which the base is electrically connected to the substrate, wherein the metal interconnect is physically separated from the buried layer and the epitaxial layer.
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7. A photosensitive device, comprising:
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a substrate of a first conductivity type; a buried layer of a second conductivity type adjacent to the substrate; and at least one phototransistor, comprising a base of the first conductivity type, wherein the base layer is directly connected to a metal interconnect through which the base is electrically connected to the substrate, but physically separated from the substrate, and the metal interconnect is physically separated from the buried layer of the second conductivity type. - View Dependent Claims (8, 9)
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10. A semiconducting device, comprising:
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a substrate; and a two terminal light sensitive transistor comprising a base and a buried layer of n-type conductivity; wherein the base is directly connected to a metal interconnect through which the base is electrically connected to the substrate, but physically separated from the substrate, the substrate is of p-type conductivity, the base is of p-type conductivity, and the metal interconnect is physically separated from the buried layer of n-type conductivity. - View Dependent Claims (11, 12)
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Specification