MOSFET and memory cell having improved drain current through back bias application
First Claim
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1. A semiconductor device configured to function as a semiconductor memory device or a transistor with increased on-state drain current, said semiconductor device comprising:
- a substrate having a first conductivity type selected from p-type conductivity type and n-type conductivity type;
a body having said first conductivity type;
a buried layer region interposed between said substrate and said body, wherein a top surface of said buried layer region is lower than a top surface of said body;
a source region and a drain region each having said second conductivity type and being separated by said body; and
said buried layer region separated from said source region and said drain region;
a gate positioned in between said source region and said drain region;
wherein said semiconductor device is configured to function as a memory device upon turning on a bipolar junction transistor (BJT) formed by said buried layer region, said body and one of said source region and said drain region, said memory device having at least two stable states, or as a transistor with increased on-state drain current, upon turning on a lateral bipolar junction (BJT) formed by said source region, said body and said drain region, resulting in increased on-state drain current but with no change in off-state drain current, depending on biases that are applied to said semiconductor device.
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Abstract
A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.
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Citations
6 Claims
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1. A semiconductor device configured to function as a semiconductor memory device or a transistor with increased on-state drain current, said semiconductor device comprising:
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a substrate having a first conductivity type selected from p-type conductivity type and n-type conductivity type; a body having said first conductivity type; a buried layer region interposed between said substrate and said body, wherein a top surface of said buried layer region is lower than a top surface of said body; a source region and a drain region each having said second conductivity type and being separated by said body; and said buried layer region separated from said source region and said drain region; a gate positioned in between said source region and said drain region; wherein said semiconductor device is configured to function as a memory device upon turning on a bipolar junction transistor (BJT) formed by said buried layer region, said body and one of said source region and said drain region, said memory device having at least two stable states, or as a transistor with increased on-state drain current, upon turning on a lateral bipolar junction (BJT) formed by said source region, said body and said drain region, resulting in increased on-state drain current but with no change in off-state drain current, depending on biases that are applied to said semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification