Light-emitting device

• US 10,553,759 B2
• Filed: 07/13/2018
• Issued: 02/04/2020
• Est. Priority Date: 07/13/2017
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Gauthier-Brun, Aurelien, Chen, Chao-Hsing, Hsaio, Chang-Tai, Chen, Chih-Hao, Hsu, Chi-Shiang, Wang, Jia-Kuen, Lin, Yung-Hsiang
• Primary Examiner(s): Withers, Grant S
• Application Number:
  US16/035,299
• Publication Number:
  US 20190019919A1
• Time in Patent Office: 571 Days
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light-emitting device includes a first semiconductor layer; a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars respectively includes a second semiconductor layer and an active layer; a first electrode covering one portion of the plurality of semiconductor pillars; and a second electrode covering another portion of the plurality of semiconductor pillars, wherein the plurality of semiconductor pillars under a covering region of the first electrode are separated from each other by a first space, the plurality of semiconductor pillars outside the covering region of the first electrode are separated from each other by a second space, and the first space is larger than the second space.

Claims

1. A light-emitting device, comprising:

a first semiconductor layer;

a plurality of semiconductor pillars separated from each other and formed on the first semiconductor layer, the plurality of semiconductor pillars each comprising a second semiconductor layer and an active layer;

a first contact layer formed on the first semiconductor layer;

a plurality of second contact layers respectively formed on the plurality of semiconductor pillars;

a first electrode contact layer formed on the first contact layer;

a second electrode contact layer covering the plurality of second contact layers;

a first electrode covering a first group of semiconductor pillars in the plurality of semiconductor pillars; and

a second electrode covering a second group of semiconductor pillars in the plurality of semiconductor pillars, wherein a first spacing separates the semiconductor pillars of the first group in the plurality of semiconductor pillars which are under a region covered by the first electrode from each other, a second spacing separates the semiconductor pillars of the second group in the plurality of semiconductor pillars which are outside of the region covered by the first electrode from each other, and the first spacing is larger than the second spacing, wherein the first contact layer is covered by the first electrode and the second electrode.

2. The light-emitting device according to claim 1, wherein the first contact layer and the plurality of second contact layers do not overlap each other.

3. The light-emitting device according to claim 1, wherein the first contact layer comprises a first contact portion and a plurality of first extending portions connected to each other.

4. The light-emitting device according to claim 3, wherein the first contact portion comprises a projected area on the first semiconductor layer that is larger than a projected area of one of the plurality of semiconductor pillars on the first semiconductor layer.

5. The light-emitting device according to claim 3, further comprising a first insulating layer comprising a first opening exposing the first contact portion, wherein the first insulating layer covers the plurality of first extending portions.

6. The light-emitting device according to claim 1, wherein the first contact layer comprises a plurality of first contact portions and a plurality of first extending portions connected to each other.

7. The light-emitting device according to claim 6, wherein one of the plurality of first contact portions of the first contact layer comprises a width larger than a width of one of the plurality of first extending portions.

8. The light-emitting device according to claim 6, wherein the plurality of first contact portions is covered by the first electrode and the second electrode.

9. The light-emitting device according to claim 1, further comprising a first insulating layer comprising a plurality of second openings respectively formed on the plurality of second contact layers.

10. The light-emitting device according to claim 1, wherein the second electrode contact layer surrounds multiple sidewalls of the first electrode contact layer.

11. The light-emitting device according to claim 1, wherein the first electrode contact layer comprises a width larger than a width of one of the plurality of semiconductor pillars.

12. The light-emitting device according to claim 1, wherein the first contact layer comprises a width larger than a width of one of the plurality of semiconductor pillars.

13. The light-emitting device according to claim 1, wherein the first electrode contact layer and the second electrode contact layer are covered by the first electrode.

14. The light-emitting device according to claim 13, further comprising a second insulating layer comprising a first opening formed on the first electrode contact layer, and the first electrode contacting the first electrode contact layer through the first opening.

15. The light-emitting device according to claim 1, wherein the second semiconductor layer comprises a sidewall separated from a sidewall of the active layer.

16. The light-emitting device according to claim 15, wherein a surface of the active layer is not covered by the second semiconductor layer.

17. The light-emitting device according to claim 1, wherein the plurality of second contact layers comprises a transparent conductive material.

18. The light-emitting device according to claim 17, wherein the first contact layer comprises a metal material.