Memory system and control method thereof

• US 10,558,360 B2
• Filed: 02/13/2018
• Issued: 02/11/2020
• Est. Priority Date: 12/28/2007
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Toshiba Memory Corporation (Kioxia Corporation)
• Inventors: Kitsunai, Kazuya, Kanno, Shinichi, Yano, Hirokuni, Hida, Toshikatsu, Yano, Junji
• Primary Examiner(s): Choe, Yong J
• Application Number:
  US15/895,204
• Publication Number:
  US 20180165011A1
• Time in Patent Office: 728 Days
• CPC Class Codes: G06F 12/0246 in block erasable memory, e.g. flash memory
• CPC Class Codes: G06F 2212/1036 Life time enhancement
• CPC Class Codes: G06F 2212/7202 Allocation control and policies
• CPC Class Codes: G06F 2212/7205 Cleaning, compaction, garbage collection, erase control
• CPC Class Codes: G06F 2212/7211 Wear leveling
• CPC Class Codes: G06F 3/0604 Improving or facilitating administration, e.g. storage management
• CPC Class Codes: G06F 3/0616 in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
• CPC Class Codes: G06F 3/0619 in relation to data integrity, e.g. data losses, bit errors
• CPC Class Codes: G06F 3/064 Management of blocks
• CPC Class Codes: G06F 3/0647 Migration mechanisms
• CPC Class Codes: G06F 3/0652 Erasing, e.g. deleting, data cleaning, moving of data to a wastebasket
• CPC Class Codes: G06F 3/0659 Command handling arrangements, e.g. command buffers, queues, command scheduling
• CPC Class Codes: G06F 3/0679 Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
• CPC Class Codes: G06F 3/0685 Hybrid storage combining heterogeneous device types, e.g. hierarchical storage, hybrid arrays

Abstract

A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.

Claims

1. A memory system comprising:

an interface configured to receive data from a host;

a nonvolatile memory including a plurality of blocks, each of the blocks being a unit for erasure of data; and

a controller circuit to control the nonvolatile memory,

wherein the controller circuit is configured to copy first data from a first block to a second block that does not store valid data, the first data being valid data, an erase count of the second block being larger than an erase count of the first block, and write second data, which is received from the host and has not been written in the nonvolatile memory, into a block to which a logical address is not allocated if the copying is not to be performed.

2. The memory system according to claim 1, wherein

the valid data is data to which a logical address designated by the host is allocated.

3. The memory system according to claim 2, wherein

the controller circuit is further configured to

release a first logical address which is allocated to the first block, and

allocate, to the second block, the first logical address which is allocated to the first block.

4. The memory system according to claim 3, wherein

the controller circuit is further configured to

erase the first data in the first block, and

write the second data into the first block after erasing the first data in the first block.

5. The memory system according to claim 4, wherein

the controller circuit is further configured to write the second data into the first block in a case where an erase count of the first block is smallest among blocks that do not store valid data.

6. The memory system according to claim 1, wherein

the controller circuit is further configured to, in response to a write command received from the host, write third data to a third block, an erase count of the third block being smallest among blocks that do not store valid data.

7. The memory system according to claim 6, wherein

the controller circuit is configured to copy the first data from the first block to the second block in a case where a frequency of receiving write commands exceeds a first threshold.

8. The memory system according to claim 7, wherein

the controller circuit is further configured to decrease the first threshold as the frequency of receiving the write commands increases, and increase the first threshold as the frequency of receiving the write commands decreases.

9. The memory system according to claim 8, wherein

the controller circuit is further configured to pick out the first threshold from a random number table.

10. The memory system according to claim 6, wherein

the controller circuit is further configured to increase a frequency of copying the first data from the first block to the second block as a frequency of receiving the write commands increases.

11. The memory system according to claim 10, wherein

the controller circuit is further configured to determine the frequency of copying the first data from the first block to the second block based on a threshold picked out from a random number table.

12. The memory system according to claim 1, wherein

the controller circuit is configured to copy the first data from the first block to the second block when a difference between the erase count of the first block and the erase count of the second block is larger than a first threshold.

13. The memory system according to claim 1, wherein

the controller circuit is further configured to manage management information for each of the blocks, the management information including an erase time of each of the blocks.

14. The memory system according to claim 13, wherein

the first block is erased earlier than a threshold timing, and the second block is erased earlier than the threshold timing.

15. A method of controlling a nonvolatile memory, the nonvolatile memory including a plurality of blocks, each of the blocks being a unit for erasure of data, said method comprising:

copying first data from a first block to a second block that does not store valid data, the first data being valid data, an erase count of the second block being larger than an erase count of the first block and

writing second data, which is received from the host and has not been written in the nonvolatile memory, into a block to which a logical address is not allocated if the copying is not to be performed.

16. The method according to claim 15, further comprising:

in response to a write command received from the host, writing third data to a third block, an erase count of the third block being smallest among the blocks that do not store valid data.

17. The method according to claim 15, wherein

the valid data is data to which a logical address designated by the host is allocated.

18. The method according to claim 17, further comprising:

releasing a first logical address which is allocated to the first block, and

allocating, to the second block, the first logical address which is allocated to the first block.

19. The method according to claim 18, further comprising:

erasing the first data in the first block, and

writing the second data into the first block after erasing the first data in the first block.

20. The method according to claim 19, further comprising:

writing the second data into the first block in a case where an erase count of the first block is smallest among blocks that do not store valid data.