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Method of forming oxynitride film

  • US 10,559,458 B1
  • Filed: 11/26/2018
  • Issued: 02/11/2020
  • Est. Priority Date: 11/26/2018
  • Status: Active Grant
First Claim
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1. A method of forming a nitrogen-incorporated silicon or metal oxide film, comprising steps of:

  • (i) depositing by a plasma a silicon or metal oxide film on a substrate using a precursor containing a silicon or metal and an oxidizing gas, said plasma having a first plasma density; and

    (ii) nitriding by a plasma the silicon or metal oxide film using a nitriding gas without using any precursor, said plasma having a second plasma density which is higher than the first plasma density.

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