Method of forming oxynitride film
First Claim
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1. A method of forming a nitrogen-incorporated silicon or metal oxide film, comprising steps of:
- (i) depositing by a plasma a silicon or metal oxide film on a substrate using a precursor containing a silicon or metal and an oxidizing gas, said plasma having a first plasma density; and
(ii) nitriding by a plasma the silicon or metal oxide film using a nitriding gas without using any precursor, said plasma having a second plasma density which is higher than the first plasma density.
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Abstract
A method of forming a nitrogen-incorporated silicon or metal oxide film, includes (i) depositing by a plasma a silicon or metal oxide film on a substrate using a precursor containing a silicon or metal and an oxidizing gas, said plasma having a first plasma density; and (ii) nitriding by a plasma the silicon or metal oxide film using a nitriding gas without using any precursor, said plasma having a second plasma density which is higher than the first plasma density.
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Citations
17 Claims
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1. A method of forming a nitrogen-incorporated silicon or metal oxide film, comprising steps of:
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(i) depositing by a plasma a silicon or metal oxide film on a substrate using a precursor containing a silicon or metal and an oxidizing gas, said plasma having a first plasma density; and (ii) nitriding by a plasma the silicon or metal oxide film using a nitriding gas without using any precursor, said plasma having a second plasma density which is higher than the first plasma density. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a nitrogen-incorporated silicon or metal oxide film by converting a silicon or metal oxide film to a silicon or metal oxynitride film at a desired location, comprising steps of:
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(a) designing a layer structure of a nitrogen-incorporated silicon or metal oxide film, which layer structure is composed of a layer A constituted by a silicon or metal oxide film and a layer B constituted by a silicon or metal oxynitride film; (b) according to the design, depositing, for the layer A, by a plasma the silicon or metal oxide film on a substrate using a precursor containing a silicon or metal and an oxidizing gas, said plasma having a first plasma density; and (c) according to the design, nitriding, for the layer B, by a plasma the silicon or metal oxide film using a nitriding gas without using any precursor in a manner converting the silicon or metal oxide film to the silicon or metal oxynitride film, said plasma having a second plasma density which is higher than the first plasma density. - View Dependent Claims (13, 14)
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15. A method of forming an oxygen-incorporated silicon or metal nitride film, comprising steps of:
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(i) depositing by a plasma a silicon or metal nitride film on a substrate using a precursor containing a silicon or metal and a nitriding gas, said plasma having a first plasma density; and (ii) oxidizing by a plasma the silicon or metal nitride film using an oxidizing gas without using any precursor, said plasma having a second plasma density which is lower than the first plasma density.
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16. A method of forming an element X-incorporated silicon or metal oxide film, comprising steps of:
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(i) depositing by a plasma a silicon or metal oxide film on a substrate using a precursor containing a silicon or metal and an oxidizing gas, said plasma having a first plasma density; and (ii) exciting an element X-containing gas by a plasma and incorporating the element X into the silicon or metal oxide film without using any precursor for deposition, said plasma having a second plasma density which is higher than the first plasma density. - View Dependent Claims (17)
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Specification