Workpiece processing method
First Claim
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1. A method of processing a workpiece comprising:
- providing a workpiece which includes a plurality of holes formed on a surface of the workpiece, wherein the plurality of holes include a small diameter hole and a large diameter hole having a diameter larger than the small diameter hole, and wherein the workpiece has an initial size difference which is a difference between the diameters of the large diameter hole and the small diameter hole;
performing a first sequence on the workpiece, the first sequence including;
a first process of forming a film on an inner surface of each of the plurality of holes and wherein the first process includes forming the film with a thickness on the inner surface of the small diameter hole which is smaller than a thickness of the film formed on the inner surface of the large diameter hole; and
a second process of isotropically etching the film, and during the second process the film of the small diameter hole is etched to a small hole film inner diameter and the film of the large diameter hole is etched to a large hole film inner diameter, and wherein the workpiece has a post-etch size difference which is a difference between the large hole film inner diameter and the small hole film inner diameter, and after the isotropically etching the post-etch size difference is smaller than the initial size difference, andwherein the first process includes a film forming process using a plasma CVD method, and the film contains silicon.
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Abstract
An embodiment of the present disclosure provides a method of processing a workpiece in which a plurality of holes are formed on a surface of the workpiece. The method includes a first sequence including a first process of forming a film with respect to an inner surface of each of the holes and a second process of isotropically etching the film. The first process includes a film forming process using a plasma CVD method, and the film contains silicon.
5 Citations
18 Claims
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1. A method of processing a workpiece comprising:
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providing a workpiece which includes a plurality of holes formed on a surface of the workpiece, wherein the plurality of holes include a small diameter hole and a large diameter hole having a diameter larger than the small diameter hole, and wherein the workpiece has an initial size difference which is a difference between the diameters of the large diameter hole and the small diameter hole; performing a first sequence on the workpiece, the first sequence including; a first process of forming a film on an inner surface of each of the plurality of holes and wherein the first process includes forming the film with a thickness on the inner surface of the small diameter hole which is smaller than a thickness of the film formed on the inner surface of the large diameter hole; and a second process of isotropically etching the film, and during the second process the film of the small diameter hole is etched to a small hole film inner diameter and the film of the large diameter hole is etched to a large hole film inner diameter, and wherein the workpiece has a post-etch size difference which is a difference between the large hole film inner diameter and the small hole film inner diameter, and after the isotropically etching the post-etch size difference is smaller than the initial size difference, and wherein the first process includes a film forming process using a plasma CVD method, and the film contains silicon. - View Dependent Claims (2, 3)
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4. A method of processing a workpiece with a plurality of holes formed on a surface thereof, the method comprising:
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a first sequence including; a first process of forming a film with respect to an inner surface of each of the holes; and a second process of isotropically etching the film, wherein in the second process, the film is isotropically etched by removing the film for each atomic layer by repeatedly executing a second sequence, and each execution of the second sequence includes; generating plasma of a first gas which includes nitrogen within a processing container of a plasma processing apparatus in which the workpiece is accommodated, and isotropically forming a mixed layer that includes an ion included in the plasma of the first gas in the atomic layer of the inner surface of the hole, and wherein the mixed layer includes silicon nitride; a first purging step of purging a space within the processing container after generating the plasma of the first gas and isotropically forming the mixed layer; after the first purging step, generating plasma of a second gas which includes fluorine within the processing container and removing the mixed layer including silicon nitride by radicals included in the plasma of the second gas; and after generating the plasma of the second gas and removing the mixed layer including silicon nitride, a second step of purging the space within the processing container. - View Dependent Claims (5, 6, 7, 8, 9)
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10. A method of processing a workpiece with a plurality of holes formed on a surface thereof, the method comprising:
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a first sequence including; a first process of forming a film with respect to an inner surface of each of the holes; and a second process of isotropically etching the film, wherein the first process includes forming a first film on the inner surface of the hole; and
forming a second film on the first film, and the second process of isotropically etching is performed after the second film is formed, andwherein during etching performed in the second process an etching resistance is lower for the first film than an etching resistance for the second film. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification