Control of directionality in atomic layer etching

• US 10,559,475 B2
• Filed: 01/23/2019
• Issued: 02/11/2020
• Est. Priority Date: 02/04/2016
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Fischer, Andreas, Lill, Thorsten, Janek, Richard
• Primary Examiner(s): Ahmed, Shamim
• Application Number:
  US16/255,606
• Publication Number:
  US 20190157105A1
• Time in Patent Office: 384 Days
• Field of Search: None
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: H01L 21/0206 during, before or after processing of insulating layers
• CPC Class Codes: H01L 21/02068 during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
• CPC Class Codes: H01L 21/225 using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer H01L21/221 - H01L21/222 take precedence
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/32138 pre- or post-treatments, e.g. anti-corrosion processes
• CPC Class Codes: H01L 21/326 Application of electric currents or fields, e.g. for electroforming H01L21/20 - H01L21/288 and H01L21/302 - H01L21/324 take precedence
• CPC Class Codes: H01L 21/67 Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere processes per se H01L21/30, H01L21/46, H01L23/00; simple temporary support means, e.g. using adhesives, electric or magnetic means H01L21/68, H01L21/302; apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto H01L24/74;

Abstract

A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer includes applying thermal energy to effect desorption of the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.

Claims

1. A method for performing atomic layer etching (ALE) on a substrate, comprising:

performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation;

performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer includes applying thermal energy to effect desorption of the portion of the modified layer.

2. The method of claim 1, wherein removing the portion of the modified layer includes a ligand exchange reaction.

3. The method of claim 2, wherein the thermal energy is applied simultaneously with the ligand exchange reaction.

4. The method of claim 2, wherein the thermal energy is applied after the ligand exchange reaction.

5. The method of claim 1, wherein the surface modification operation is configured to diffuse ions into the substrate surface to the depth as controlled by the bias voltage.

6. The method of claim 1, wherein the bias voltage is applied during part of the surface modification operation, the part during which the bias voltage is applied to increase an amount of the depth in a vertical direction that increases anisotropy of the ALE, and a portion during which the bias voltage is not applied to increase the depth in a non-vertical direction that increases isotropy of the ALE.

7. The method of claim 1, wherein the bias voltage does not exceed approximately 100 V.

8. The method of claim 1, wherein performing the surface modification operation includes exposing the substrate surface to a plasma, wherein the exposure to the plasma is configured to convert the at least one monolayer of the substrate surface to the modified layer.

9. The method of claim 8, wherein exposing the substrate surface to the plasma includes using a remote plasma source to generate the plasma, and flowing the plasma from the remote plasma source into a chamber in which the substrate is disposed.

10. The method of claim 8, wherein exposing the substrate surface to the plasma includes inductively coupling power into a chamber in which the substrate is disposed.

11. The method of claim 8, wherein exposing the substrate surface to the plasma includes capacitively coupling power into a chamber in which the substrate is disposed.

12. The method of claim 1,

wherein the substrate surface includes a metal, metal oxide, metal nitride, metal phosphide, metal sulfide, metal arsenide, or metal compound.

23. The method of claim 8, wherein exposing the substrate surface to the halogen-containing plasma includes using a remote plasma source to generate the halogen-containing plasma, and flowing the halogen-containing plasma from the remote plasma source into a chamber in which the substrate is disposed.

13. A method for performing atomic layer etching (ALE) on a substrate, comprising:

performing a surface modification operation on a substrate surface, the surface modification operation including exposing the substrate surface to a first plasma that converts at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage being configured to control a depth of the substrate surface that is converted by the surface modification operation, wherein the bias voltage is configured to accelerate ions from the first plasma towards the substrate surface without substantially etching the substrate surface;

performing a removal operation on the substrate surface, the removal operation including removing at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer includes applying thermal energy to effect desorption of the portion of the modified layer;

performing a clean operation on the substrate surface, the clean operation including removing residues generated by the removal operation from the substrate surface, the clean operation further including exposing the substrate surface to a second plasma, wherein the residues are volatilized by the exposure to the second plasma.

14. The method of claim 13, wherein removing the portion of the modified layer includes a ligand exchange reaction.

15. The method of claim 14, wherein the thermal energy is applied simultaneously with the ligand exchange reaction.

16. The method of claim 14, wherein the thermal energy is applied after the ligand exchange reaction.

17. The method of claim 13,

wherein the substrate surface includes a metal, metal oxide, metal nitride, metal phosphide, metal sulfide, metal arsenide, or metal compound.

18. A method for performing atomic layer etching (ALE) on a substrate, comprising:

performing a surface modification operation on a substrate surface, the surface modification operation including exposing the substrate surface to a halogen-containing plasma that converts at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage being configured to control a depth of the substrate surface that is converted by the surface modification operation, wherein the bias voltage is configured to accelerate ions from the first plasma towards the substrate surface without substantially etching the substrate surface;

performing a removal operation on the substrate surface, the removal operation including removing at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer includes a ligand exchange reaction and applying thermal energy to effect desorption of the portion of the modified layer.

19. The method of claim 18,

wherein the substrate surface includes a metal, metal oxide, metal nitride, metal phosphide, metal sulfide, metal arsenide, or metal compound;

wherein the exposure to the halogen-containing plasma forms a metal halide.

20. The method of claim 18, wherein exposing the substrate surface to the halogen-containing plasma includes introducing a halogen-containing gas into a chamber in which the substrate is disposed, and igniting the halogen-containing plasma.

21. The method of claim 20, wherein igniting the halogen-containing plasma includes inductively coupling power into the halogen-containing gas.

22. The method of claim 20, wherein igniting the halogen-containing plasma includes capacitively coupling power into the halogen-containing gas.