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Control of directionality in atomic layer etching

  • US 10,559,475 B2
  • Filed: 01/23/2019
  • Issued: 02/11/2020
  • Est. Priority Date: 02/04/2016
  • Status: Active Grant
First Claim
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1. A method for performing atomic layer etching (ALE) on a substrate, comprising:

  • performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation;

    performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer includes applying thermal energy to effect desorption of the portion of the modified layer.

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