High-power light-emitting diode and light-emitting module having the same

• US 10,559,720 B2
• Filed: 08/10/2018
• Issued: 02/11/2020
• Est. Priority Date: 02/11/2016
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Jang, Jong Min, Bae, Seon Min, Lim, Jae Hee, Kim, Chang Yeon, Kim, Chae Hon
• Primary Examiner(s): Geyer, Scott B
• Application Number:
  US16/100,783
• Publication Number:
  US 20180351042A1
• Time in Patent Office: 550 Days
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/325 characterised by the doping materials
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/64 Heat extraction or cooling elements

Abstract

An LED includes a gallium nitride substrate, a first semiconductor layer disposed thereon, and a mesa including a second semiconductor layer disposed on the first semiconductor layer and an intervening active layer. A first contact layer includes an outer contact part in contact with the first semiconductor layer near an edge of the substrate and an inner contact part in contact with the first semiconductor layer within a region encompassed by the outer contact part. A second contact layer is disposed on the mesa in contact with the second semiconductor layer. An upper insulation layer has first and second opening parts overlapping the first and second contact layers. First and second electrode pads are electrically connected to the first and second contact layers through the first and second opening parts. The LED can be driven at 150-315 A/cm² and has a maximum junction temperature of 150-190° C.

Claims

1. A light emitting diode, comprising:

a gallium nitride substrate;

a first conductivity-type semiconductor layer disposed on the gallium nitride substrate;

a mesa comprising a second conductivity-type semiconductor layer disposed on the first conductivity-type semiconductor layer and an active layer interposed between the second conductivity-type semiconductor layer and the first conductivity-type semiconductor layer;

a first contact layer comprising an outer contact portion disposed along a circumference of the mesa and contacting the first conductivity-type semiconductor layer near an edge of the gallium nitride substrate and a plurality of inner contact portions disposed in a region surrounded by the outer contact portion and contacting the first conductivity-type semiconductor layer;

a second contact layer disposed on the mesa and contacting the second conductivity-type semiconductor layer;

an upper insulation layer having a first opening overlapping the first contact layer and a second opening overlapping the second contact layer;

a first electrode pad electrically connected to the first contact layer through the first opening; and

a second electrode pad electrically connected to the second contact layer through the second opening,

wherein the light emitting diode is configured to operate at a current density of between 150 A/cm² and 315 A/cm2 with a maximum junction temperature of between 150°

C. and 190 °

.

2. The light emitting diode of claim 1, wherein the inner contact portions extend from the outer contact portion.

3. The light emitting diode of claim 1, wherein the first contact layer is spaced apart from the mesa while covering an upper region of the mesa and has an opening overlapping the second contact layer, and a sidewall of the opening of the first contact layer is covered by the upper insulation layer.

4. The light emitting diode of claim 3, further comprising:

an intermediate connecting portion disposed inside the opening of the first contact layer and connected to the second contact layer,

wherein the second opening of the upper insulation layer exposes the intermediate connecting portion and the second electrode pad is connected to the intermediate connecting portion.

5. The light emitting diode of claim 4, further comprising:

a lower insulation layer covering the first conductivity-type semiconductor layer and the mesa to insulate the first contact layer from the mesa, the lower insulation layer being interposed between the second contact layer and the intermediate connecting portion,

wherein the lower insulation layer has an opening exposing the first conductivity-type semiconductor layer such that the outer contact portion and the inner contact portion contact the first conductivity-type layer through the opening exposing the first conductivity-type semiconductor layer,

wherein the lower insulation layer has an opening exposing the second contact layer, and

wherein the intermediate connecting portion is connected to the second contact layer through the opening of the lower insulation layer exposing the second contact layer.

6. The light emitting diode of claim 1, wherein the gallium nitride substrate comprises a side surface and has a thickness of 300 μ

m or more,

wherein the side surface of the gallium nitride substrate comprising a perpendicular surface perpendicular to an upper surface of the gallium nitride substrate on which the first conductivity-type semiconductor layer is placed and a first inclined surface connecting the perpendicular surface to a lower surface of the gallium nitride substrate, and

wherein the perpendicular surface having a height of 50 μ

m to 200 μ

m.

7. The light emitting diode of claim 6, wherein the side surface of the gallium nitride substrate further comprises a second inclined surface connecting the perpendicular surface to the upper surface of the gallium nitride substrate, and

wherein the gallium nitride substrate has a depth of 30 μ

m to 50 μ

m from the upper surface of the gallium nitride substrate to the perpendicular surface and a depth of 80 μ

m to 100 μ

m from the lower surface of the gallium nitride substrate to the perpendicular surface.

8. The light emitting diode of claim 7, wherein the upper insulation layer covers the second inclined surface above the perpendicular surface along an edge of the gallium nitride substrate.

9. The light emitting diode of claim 1, wherein the gallium nitride substrate comprises a surface texture formed on a lower surface of the gallium nitride substrate, and

wherein the surface texture comprises a plurality of truncated cones.

10. The light emitting diode of claim 9, further comprising an SiO₂ mask disposed on each of the truncated cones.

11. The light emitting diode of claim 10, wherein a sharp valley is formed between the truncated cones.

12. The light emitting diode of claim 1, wherein the gallium nitride substrate has a dopant concentration of 8E17/cm³ to 1E18/cm³ and the first conductivity-type semiconductor layer has a dopant concentration of 1E19/cm³ to 2E19/cm³.

13. A light emitting module, comprising:

a printed circuit board;

a submount mounted on the printed circuit board; and

a light emitting diode comprising;

a gallium nitride substrate;

a first conductivity-type semiconductor layer disposed on the gallium nitride substrate;

a mesa comprising a second conductivity-type semiconductor layer disposed on the first conductivity-type semiconductor layer and an active layer interposed between the second conductivity-type semiconductor layer and the first conductivity-type semiconductor layer;

a first contact layer comprising an outer contact portion disposed along a circumference of the mesa and contacting the first conductivity-type semiconductor layer near an edge of the gallium nitride substrate and a plurality of inner contact portions disposed in a region surrounded by the outer contact portion and contacting the first conductivity-type semiconductor layer;

a second contact layer disposed on the mesa and contacting the second conductivity-type semiconductor layer;

an upper insulation layer having a first opening overlapping the first contact layer and a second opening overlapping the second contact layer;

a first electrode pad electrically connected to the first contact layer through the first opening; and

a second electrode pad electrically connected to the second contact layer through the second opening,

wherein the light emitting diode is configured to operate at a current density of between 150 A/cm² and 315 A/cm2 with a maximum junction temperature of between 150°

C. and 190°

, and

wherein the light emitting diode is flip-bonded to the submount.

14. The light emitting module of claim 13, wherein the submount comprises:

a base substrate;

an upper electrode pattern disposed on the base substrate and comprising a first upper electrode and a second upper electrode;

a lower electrode pattern disposed on a bottom of the base substrate and comprising a first lower electrode and a second lower electrode; and

vias connecting the upper electrode pattern to the lower electrode pattern.

15. The light emitting module of claim 14, wherein the base substrate is an aluminum nitride substrate.

16. The light emitting module of claim 14, wherein the lower electrode pattern further comprises a heat dissipation pad.

17. The light emitting module of claim 13, wherein the inner contact portions extend from the outer contact portion.

18. The light emitting module of claim 13, wherein the first contact layer is spaced apart from the mesa while covering an upper region of the mesa and has an opening overlapping the second contact layer, and

wherein a sidewall of the opening of the first contact layer is covered by the upper insulation layer.

19. The light emitting module of claim 18, wherein the light emitting diode further comprises:

an intermediate connecting portion disposed inside the opening of the first contact layer and connected to the second contact layer,

wherein the second opening of the upper insulation layer exposes the intermediate connecting portion and the second electrode pad is connected to the intermediate connecting portion.

20. The light emitting module of claim 19, wherein the light emitting diode further comprises:

a lower insulation layer covering the first conductivity-type semiconductor layer and the mesa to insulate the first contact layer from the mesa, the lower insulation layer being interposed between the second contact layer and the intermediate connecting portion,

wherein the lower insulation layer has an opening exposing the first conductivity-type semiconductor layer such that the outer contact portion and the inner contact portion contact the first conductivity-type semiconductor layer through the opening exposing the first conductivity-type semiconductor layer,

wherein the lower insulation layer has an opening exposing the second contact layer, and

wherein the intermediate connecting portion is connected to the second contact layer through the opening of the lower insulation layer.