Low capacitance switch for programmable gain amplifier or programable gain instrumentation amplifier

• US 10,560,061 B2
• Filed: 09/01/2016
• Issued: 02/11/2020
• Est. Priority Date: 09/01/2016
• Status: Active Grant

• Current Assignee: Analog Devices, Inc.
• Original Assignee: Analog Devices, Inc.
• Inventors: Herrera, Sandro, Jeffery, Alan K
• Primary Examiner(s): Retebo, Metasebia T
• Application Number:
  US15/254,782
• Publication Number:
  US 20180062646A1
• Time in Patent Office: 1,258 Days
• Field of Search: 327437, 327308, 438109, 257369
• CPC Class Codes: H03F 1/342 in field-effect transistor amplifiers
• CPC Class Codes: H03F 2200/261 Amplifier which being suitable for instrumentation applications
• CPC Class Codes: H03F 2203/45528 the FBC comprising one or more passive resistors and being coupled between the LC and the IC
• CPC Class Codes: H03F 2203/45534 the FBC comprising multiple switches and being coupled between the LC and the IC
• CPC Class Codes: H03F 2203/45544 the IC comprising one or more capacitors, e.g. coupling capacitors
• CPC Class Codes: H03F 2203/45594 the IC comprising one or more resistors, which are not biasing resistor
• CPC Class Codes: H03F 3/45475 using IC blocks as the active amplifying circuit
• CPC Class Codes: H03G 1/0088 using discontinuously variable devices, e.g. switch-operated
• CPC Class Codes: H03G 3/001 Digital control of analog signals
• CPC Class Codes: H03K 17/063 in field-effect transistor switches
• CPC Class Codes: H03K 2217/0018 Special modifications or use of the back gate voltage of a FET
• CPC Class Codes: H03K 2217/0054 Gating switches, e.g. pass gates

Abstract

A low capacitance n-channel analog switch circuit, a p-channel analog switch circuit, and a full CMOS transmission gate (T-gate) circuit are described. Resistive decoupling can be used to isolate the switch or T-gate from AC grounds. A semiconductor region that is separated from a body region of a pass field-effect transistor (FET), such as by an insulator, can be coupled to or driven to a voltage similar to the input voltage or other desired bias voltage (e.g., an operational amplifier output) to help reduce parasitic capacitance of the switch or T-gate. The switch or T-gate can help provide improved frequency bandwidth or frequency response. The switch can be useful in a programmable gain amplifier (PGA) or programmable gain instrumentation amplifier (PGIA) or other circuit in which excessive switch capacitance could degrade circuit performance.

Claims

1. An analog switch circuit, comprising:

a first pass FET, including a gate coupled to a first control signal input, a first conduction terminal coupled to a signal input, a second conduction terminal coupled to a signal output, and a first body, wherein a local first semiconductor region is insulated by an underlying insulator and from the first body by a lateral insulator so as to be capable of being switchably driven independently from the first body.

2. The analog switch circuit of claim 1, wherein the local first semiconductor region is dedicated to the analog switch circuit by being additionally electrically isolated by a second insulator that, together with a first insulator and the underlying insulator, forms a moat region about or near the first pass FET, and wherein the local first semiconductor region is coupled to a circuit node, or driven to, a bias voltage.

3. The analog switch circuit of claim 2, wherein the local first semiconductor region is coupled to, or driven to a voltage like that of, one of the signal input or the signal output.

4. The analog switch circuit of claim 3, wherein the local first semiconductor region is coupled to, or driven to a voltage like that of, the signal output.

5. The analog switch circuit of claim 2, included in a feedback network of a programmable gain amplifier circuit, wherein the local first semiconductor region is electrically connected to a signal output of an amplifier of the programmable gain amplifier circuit.

6. The analog switch circuit of claim 2, included in a feedback network of a programmable gain instrumentation amplifier circuit, wherein the local first semiconductor region is electrically connected to a signal output of an amplifier of the programmable gain instrumentation amplifier circuit.

7. The analog switch circuit of claim 1, wherein the first body is switchably coupled to a first bias voltage via a first body decoupling resistor when the first pass FET is off, the first body also switchably coupled to at least one of the signal input or the signal output when the first pass FET is on.

8. The analog switch circuit of claim 7, wherein the first body is switchably coupled to the signal input when the first pass FET is on.

9. The analog switch circuit of claim 1, wherein the first pass FET includes the gate coupled to the first control signal input via a first gate decoupling resistor.

10. The analog switch circuit of claim 1, further comprising:

a second pass FET, including a gate coupled to a second control signal input, a first conduction terminal coupled to the signal input, a second conduction terminal coupled to the signal output, and a second body, wherein the second body is separated from a second local semiconductor region by an insulator, wherein the second local semiconductor region is coupled to a circuit node, or driven to a bias voltage; and

wherein the first pass FET is an NFET and the second pass FET is a PFET, and wherein the first pass FET and the second pass FET complement each other to form a transmission gate.

11. The analog switch circuit of claim 10, wherein the first semiconductor region and the second semiconductor region are shared in common between the first pass FET and the second pass FET.

12. The analog switch circuit of claim 10, wherein the second pass FET, includes the gate coupled to the second control signal input via a second gate decoupling resistor.

13. An analog switch circuit, comprising:

a first pass FET, including a gate coupled to a first control signal input via a first gate decoupling resistor, a first conduction terminal coupled to a signal input, a second conduction terminal coupled to a signal output, and a first body separated from a local first semiconductor region by a lateral first insulator; and

a second pass FET, including a gate coupled to a second control signal input via a second gate decoupling resistor, a first conduction terminal coupled to the signal input, a second conduction terminal coupled to the signal output, and a second body separated from a local second semiconductor region by a lateral second insulator; and

wherein the local first and second semiconductor regions are electrically connected to an amplifier signal output, and

wherein the local first and second semiconductor regions are insulated from the first body and by an underlying insulator so as to be capable of being switchably driven independently from the first and second bodies, respectively.

14. The analog switch circuit of claim 13, included in a feedback network of a programmable gain amplifier circuit, and wherein the local first and second semiconductor regions are connected to a signal output of an amplifier in the programmable gain amplifier circuit.

15. The analog switch circuit of claim 13, included in a feedback network of a programmable gain instrumentation amplifier circuit, and wherein the local first and second semiconductor regions are connected to a signal output of an amplifier in the programmable gain instrumentation amplifier circuit.

16. The analog switch circuit of claim 13, wherein the local first and second semiconductor regions are shared.

17. A method of using at least one first pass FET for switchably passing or isolating an analog signal from a signal input to a signal output, the method comprising:

providing a first control signal to a gate of the at least one first pass FET to turn the at least one first pass FET on to pass the analog signal from the signal input to the signal output and to turn the at least one first pass FET off to isolate the analog signal at the signal input from the signal output; and

switchably coupling or driving, to a circuit node or a bias voltage, a local first semiconductor region, separated from a body region of the at least one first pass FET by a first lateral insulator so as to be capable of being switchably coupled or driven independently from the body region, separated from other circuitry on an integrated circuit by a second insulator, and further insulated by an underlying third insulator.

18. The method of claim 17, comprising connecting the local first semiconductor region to the signal output of an amplifier circuit when the at least one first pass FET is on and when the at least one first pass FET is off.

19. The method of claim 17, comprising using the at least one first pass FET to selectively switch at least one element in a feedback network of at least one of programmable gain amplifier circuit or a programmable gain instrumentation amplifier circuit.

20. The method of claim 17, further comprising:

using a second pass FET complementary in type to the at least one first pass FET, for switchably passing or isolating an analog signal from a signal input to a signal output;

providing a second control signal to a gate of the second pass FET to turn the second pass FET on to pass the analog signal from the signal input to the signal output and to turn the second pass FET off to isolate the analog signal at the signal input from the signal output; and

coupling the local first semiconductor region, separated from a body region of the second pass FET by a second insulator, to the signal output of an operational amplifier circuit of a programmable gain amplifier (PGA) or a programmable gain instrumentation amplifier (PGIA) when the second pass FET is on and when the second pass FET is off.