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Imaging systems having dual storage gate overflow capabilities

  • US 10,560,649 B2
  • Filed: 02/20/2018
  • Issued: 02/11/2020
  • Est. Priority Date: 02/20/2018
  • Status: Active Grant
First Claim
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1. An image sensor pixel, comprising:

  • a photodiode that generates charge in response to incident light;

    a first storage gate coupled to the photodiode, wherein the first storage gate comprises a first charge storage region;

    a second storage gate coupled to the photodiode, wherein the second storage gate comprises a second charge storage region;

    first, second, and third transistors;

    a floating diffusion region coupled to the first storage gate through the first transistor; and

    a capacitor coupled to the second charge storage region of the second storage gate through the second transistor, wherein the capacitor is coupled to the floating diffusion region through the third transistor, and wherein the third transistor has first and second terminals, the first transistor being coupled to the first terminal of the third transistor and the second transistor being coupled to the second terminal of third transistor.

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