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Metal oxy-flouride films based on oxidation of metal flourides

  • US 10,563,303 B2
  • Filed: 04/27/2018
  • Issued: 02/18/2020
  • Est. Priority Date: 05/10/2017
  • Status: Active Grant
First Claim
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1. A method comprising:

  • performing atomic layer deposition (ALD), chemical vapor deposition (CVD) or electron beam ion assisted deposition (EB-IAD) to deposit a yttrium-based fluoride coating having a thickness of about 10 nm to about 10 microns onto a surface of a chamber component for a processing chamber;

    heating the chamber component to an elevated temperature of about 150-1500°

    C.;

    exposing the chamber component to an oxygen source comprising an oxygen-based plasma or radicals at the elevated temperature for a duration of about 0.1-72 hours; and

    converting the yttrium-based fluoride coating into a yttrium-based oxy-fluoride coating.

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