Method for programming a bipolar resistive switching memory device
First Claim
1. An electronic circuit comprising:
- a first bipolar switching memory device comprising first and second electrodes at terminals of which a programming voltage programming the first memory device in a high-resistance or low-resistance state can be applied during a programming operation;
a first circuitry configured to generate a data signal during the programming operation having a first data state which is constant over the programming operation or a second data state which is constant for only a portion of the programming operation less than an entirety of the programming operation, a time period d being defined when said data signal is in the second state during the programming operation, the first and second data states corresponding to states 0 and 1 and being representative of the state in which the first memory device is configured to be programmed, and apply the data signal to the first electrode of the first memory device;
a second circuitry configured to apply, to the second electrode of the first memory device, a control signal that alternates at least once, during time period d, between a state 1 and a state 0, the control signal being applied identically with an identical voltage change when programming the first memory device in the high-resistance state and when programming the first memory device in the low-resistance state;
wherein states 0 and 1 of the data signal and of the control signal correspond to zero and positive electric potentials respectively, forming the programming voltage when one of either the data signal or control signal is in state 0 and the other of either the data signal or control signal is in state 1;
the electronic circuit further comprising a selection device electrically linked to the first memory device and configured to allow a current to flow through the first memory device, the selection device being driven by a selection signal transitioning between state 0 and state 1 after a beginning of time period d and transitioning between state 1 and state 0 before an end of time period d or the selection device being driven by a selection signal transitioning between state 1 and state 0 after the beginning of time period d and transitioning between state 0 and state 1 before the end of time period d, for each of the constant states of 0 and 1 of the data signal;
and wherein the change from one of states 0 or 1 of the control signal to the other of states 0 or 1 of the control signal is controlled during the programming operation.
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Abstract
An electronic circuit including a bipolar switching memory device including first and second electrodes at terminals of which a programming voltage can be applied, the circuit including: a first mechanism applying, to the first electrode, a data signal having, during a time period d, a constant state 0 or 1; a second mechanism applying, to the second electrode, a control signal that alternates, during time period d, between state 1 and state 0, the control signal being same regardless of the state in which the memory device is programmed; a selection device allowing a current to flow into the memory device during a programming time included in time period d; and a change of state of the control signal taking place during the programming time.
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Citations
19 Claims
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1. An electronic circuit comprising:
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a first bipolar switching memory device comprising first and second electrodes at terminals of which a programming voltage programming the first memory device in a high-resistance or low-resistance state can be applied during a programming operation; a first circuitry configured to generate a data signal during the programming operation having a first data state which is constant over the programming operation or a second data state which is constant for only a portion of the programming operation less than an entirety of the programming operation, a time period d being defined when said data signal is in the second state during the programming operation, the first and second data states corresponding to states 0 and 1 and being representative of the state in which the first memory device is configured to be programmed, and apply the data signal to the first electrode of the first memory device; a second circuitry configured to apply, to the second electrode of the first memory device, a control signal that alternates at least once, during time period d, between a state 1 and a state 0, the control signal being applied identically with an identical voltage change when programming the first memory device in the high-resistance state and when programming the first memory device in the low-resistance state; wherein states 0 and 1 of the data signal and of the control signal correspond to zero and positive electric potentials respectively, forming the programming voltage when one of either the data signal or control signal is in state 0 and the other of either the data signal or control signal is in state 1; the electronic circuit further comprising a selection device electrically linked to the first memory device and configured to allow a current to flow through the first memory device, the selection device being driven by a selection signal transitioning between state 0 and state 1 after a beginning of time period d and transitioning between state 1 and state 0 before an end of time period d or the selection device being driven by a selection signal transitioning between state 1 and state 0 after the beginning of time period d and transitioning between state 0 and state 1 before the end of time period d, for each of the constant states of 0 and 1 of the data signal; and wherein the change from one of states 0 or 1 of the control signal to the other of states 0 or 1 of the control signal is controlled during the programming operation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 17)
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13. A method for programming a first bipolar switching memory device comprising first and second electrodes at the terminals of which a programming voltage programming the first memory device in a high-resistance or low-resistance state can be applied during a programming operation, the method comprising:
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generation of a data signal during the programming operation having a first data state which is constant over the programming operation or a second data state which is constant for only a portion of the programming operation less than the entire programming period, a time period d being defined when said data signal is in the second state during the programming operation, the first and second data states corresponding to states 0 and 1 and being representative of the state in which the first memory device is configured to be programmed, and apply the data signal to the first electrode of the first memory device; application, to the second electrode of the first memory device, of a control signal that alternates at least once, during time period d, between a state 1 and a state 0, the control signal being applied identically with an identical voltage change when programming the first memory device in the high-resistance state and when programming the first memory device in the low-resistance state; wherein states 0 and 1 of the data signal and of the control signal correspond to zero and positive electric potentials respectively, forming the programming voltage when one of either the data signal or control signal is in state 0 and the other of either the data signal or control signal is in state 1; wherein the first memory device is electrically linked to a selection device such that the selection device allows a current to flow through the first memory device, the selection device being driven by a selection signal transitioning between state 0 and state 1 after a beginning of time period d and transitioning between state 1 and state 0 before an end of time period d or the selection device being driven by a selection signal transitioning between state 1 and state 0 after the beginning of time period d and transitioning between state 0 and state 1 before the end of time period d, for each of the constant states of 0 and 1 of the data signal; and wherein a change from one of states 0 and 1 of the control signal to the other of states 0 and 1 of the control signal is included in the programming operation. - View Dependent Claims (14, 15, 16)
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18. An electronic circuit, comprising:
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a first bipolar switching memory device having first and second electrodes; a second bipolar switching memory device having third and fourth electrodes, the third electrode being connected to the second electrode at a node; a first conductive line; a first transistor having a first active region connected to the node, a second active region connected to the first conductive line, and a first gate; a second transistor having third and fourth active regions and a second gate, the second gate begin connected to the node; and circuitry configured to; generate a control signal and apply the control signal to the first conductive line; generate a selection signal and apply the selection signal to the gate of the first transistor; and generate first and second data signals and apply the first and second data signals to the first electrode and the fourth electrode, respectively. - View Dependent Claims (19)
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Specification