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Ultrathin atomic layer deposition film accuracy thickness control

  • US 10,566,187 B2
  • Filed: 03/20/2015
  • Issued: 02/18/2020
  • Est. Priority Date: 03/20/2015
  • Status: Active Grant
First Claim
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1. A method for depositing silicon oxide films by plasma-enhanced atomic layer deposition on semiconductor substrates, the method comprising:

  • (a) inserting a first semiconductor substrate into a chamber;

    (b) after inserting the first semiconductor substrate into the chamber and prior to performing a first cycle of plasma-enhanced atomic layer deposition (PEALD) at a deposition temperature, raising the first semiconductor substrate'"'"'s temperature to about the deposition temperature by exposing the first semiconductor substrate to a helium-free soak gas for a duration of about 500 seconds or less to reduce wafer-to-wafer variation compared to semiconductor substrates processed using a helium-containing soak gas prior to performing the PEALD on a first semiconductor substrate;

    (c) performing the PEALD to deposit a first silicon oxide film on the first semiconductor substrate; and

    (d) after depositing the first silicon oxide film on the first semiconductor substrate, performing the PEALD in one or more cycles to deposit a second silicon oxide film on a second semiconductor substrate,wherein a cycle of the PEALD comprisesexposing the substrate to a silicon-containing precursor in a non-plasma environment for a duration sufficient to substantially adsorb the silicon-containing precursor to a surface of the substrate andexposing the substrate to reactant gases comprising an inert gas and an oxidant in a plasma environment to form at least a portion of the silicon oxide film,wherein the soak gas contains the reactant gases,wherein the inert gas is selected from the group consisting of nitrogen, argon, and combinations thereof,wherein the oxidant selected from the group consisting of oxygen and nitrous oxide, and combinations thereof, andwherein the first silicon oxide film is deposited to a thickness of less than about 5 nm.

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