Systems and methods for anisotropic material breakthrough
First Claim
1. An etching method comprising:
- generating an inert plasma from an inert precursor within a processing region of a semiconductor processing chamber;
modifying a surface of an exposed material on a semiconductor substrate within the processing region of the semiconductor processing chamber with effluents of the inert plasma;
subsequent the modifying, forming a remote plasma from a fluorine-containing precursor to produce plasma effluents;
flowing the plasma effluents to the processing region of the semiconductor processing chamber with a hydrogen-containing precursor that has bypassed the remote plasma;
removing the modified surface of the exposed material from the semiconductor substrate with the plasma effluents of the fluorine-containing precursor; and
annealing modified material remaining subsequent the etching operation, wherein the annealing comprises contacting the modified material with an inert gas heated to a temperature above a temperature of the substrate.
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Abstract
Processing methods may be performed to remove unwanted materials from a substrate, such as a native oxide material. The methods may include forming an inert plasma within a processing region of a processing chamber. Effluents of the inert plasma may be utilized to modify a surface of an exposed material on a semiconductor substrate within the processing region of the semiconductor chamber. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.
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Citations
19 Claims
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1. An etching method comprising:
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generating an inert plasma from an inert precursor within a processing region of a semiconductor processing chamber; modifying a surface of an exposed material on a semiconductor substrate within the processing region of the semiconductor processing chamber with effluents of the inert plasma; subsequent the modifying, forming a remote plasma from a fluorine-containing precursor to produce plasma effluents; flowing the plasma effluents to the processing region of the semiconductor processing chamber with a hydrogen-containing precursor that has bypassed the remote plasma; removing the modified surface of the exposed material from the semiconductor substrate with the plasma effluents of the fluorine-containing precursor; and annealing modified material remaining subsequent the etching operation, wherein the annealing comprises contacting the modified material with an inert gas heated to a temperature above a temperature of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An etching method comprising:
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igniting an inert plasma within a processing region of a semiconductor processing chamber; modifying an exposed region of silicon oxide on a semiconductor substrate within the processing region of the semiconductor processing chamber with effluents of the inert plasma; subsequent the modifying, forming a plasma of a fluorine-containing precursor to produce plasma effluents, wherein the plasma of the fluorine-containing precursor is formed remotely from the processing region of the semiconductor processing chamber; contacting the modified silicon oxide with plasma effluents of a fluorine-containing precursor; etching the modified silicon oxide, wherein the modifying, contacting, and etching are all performed in the semiconductor processing chamber, and wherein the etching is performed at a temperature above about 70°
C.; andannealing modified silicon oxide remaining subsequent the etching operation, wherein the annealing comprises contacting the modified silicon oxide with an inert gas heated to a temperature above a temperature of the substrate. - View Dependent Claims (12, 13, 14, 15, 16)
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17. An etching method comprising:
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forming an inert plasma within a processing region of a semiconductor processing chamber, wherein the inert plasma comprises a hydrogen plasma formed by a bias power of less than 100 W; modifying an exposed region of silicon oxide on a semiconductor substrate within the processing region of the semiconductor processing chamber with effluents of the inert plasma, wherein the exposed region of silicon oxide comprises a material positioned about a silicon mandrel, wherein a pressure within the semiconductor processing chamber is maintained below about 1 Torr during the modifying; forming a plasma of a fluorine-containing precursor in a remote region of the semiconductor processing chamber that is separated from the processing region of the semiconductor processing chamber by a showerhead; contacting the modified silicon oxide with plasma effluents of the fluorine-containing precursor; and etching the modified silicon oxide at a temperature of about 90°
C., wherein the modifying, contacting, and etching are all performed in the semiconductor processing chamber, and wherein no solid byproducts are produced during the etching. - View Dependent Claims (18, 19)
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Specification