Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor
First Claim
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1. Method for patterning a nitride layer having the following steps:
- A) providing the nitride layer, which is formed with a silicon nitride of a first type, wherein the silicon nitride of the first type is SiN and has a non-stoichiometric ratio of N/Si,B) defining regions to be transformed of the nitride layer and remaining regions of the nitride layer,C) introducing the nitride layer into a transformation chamber for the duration of a transformation period, wherein the transformation period is selected such that at least 80% of the regions to be transformed of the nitride layer are transformed into oxide regions, which are formed with a silicon oxide,wherein process conditions for transformation in the transformation chamber during method step C) are selected as follows;
temperature of at least 80°
C. and at most 200°
C.,pressure of at least 1 bar and at most 15 bar, andrelative humidity of at least 80% and at most 99%.
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Abstract
The invention relates to a method for structuring a nitride layer (2), comprising the following steps: A) providing a nitride layer (2) formed with silicon nitride of a first type, B) defining regions (40) of said nitride layer (2) to be transformed, and C) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.
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Citations
6 Claims
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1. Method for patterning a nitride layer having the following steps:
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A) providing the nitride layer, which is formed with a silicon nitride of a first type, wherein the silicon nitride of the first type is SiN and has a non-stoichiometric ratio of N/Si, B) defining regions to be transformed of the nitride layer and remaining regions of the nitride layer, C) introducing the nitride layer into a transformation chamber for the duration of a transformation period, wherein the transformation period is selected such that at least 80% of the regions to be transformed of the nitride layer are transformed into oxide regions, which are formed with a silicon oxide, wherein process conditions for transformation in the transformation chamber during method step C) are selected as follows; temperature of at least 80°
C. and at most 200°
C.,pressure of at least 1 bar and at most 15 bar, and relative humidity of at least 80% and at most 99%. - View Dependent Claims (2, 3, 4, 5, 6)
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