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Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor

  • US 10,566,210 B2
  • Filed: 02/19/2016
  • Issued: 02/18/2020
  • Est. Priority Date: 02/20/2015
  • Status: Active Grant
First Claim
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1. Method for patterning a nitride layer having the following steps:

  • A) providing the nitride layer, which is formed with a silicon nitride of a first type, wherein the silicon nitride of the first type is SiN and has a non-stoichiometric ratio of N/Si,B) defining regions to be transformed of the nitride layer and remaining regions of the nitride layer,C) introducing the nitride layer into a transformation chamber for the duration of a transformation period, wherein the transformation period is selected such that at least 80% of the regions to be transformed of the nitride layer are transformed into oxide regions, which are formed with a silicon oxide,wherein process conditions for transformation in the transformation chamber during method step C) are selected as follows;

    temperature of at least 80°

    C. and at most 200°

    C.,pressure of at least 1 bar and at most 15 bar, andrelative humidity of at least 80% and at most 99%.

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