Semiconductor device and method for fabricating the same
First Claim
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1. A semiconductor device, comprising:
- a substrate;
a gate structure on the substrate;
an epitaxial layer in the substrate adjacent to the gate structure; and
a cap layer on the epitaxial layer, wherein a top surface of the cap layer is even with or lower than a top surface of the substrate, the top surface of the cap layer comprises a planar surface parallel to a top surface of the substrate, and a top surface of the epitaxial layer comprises a first planar inclined sidewall extending upward from one end of a curved surface, and a second planar inclined sidewall extending upward from other end of the curved surface, wherein the curved surface is substantially semicircular under cross-sectional view and is in direct contact to sidewalls and a bottom surface of the cap layer.
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Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; forming an epitaxial layer adjacent to the gate structure; forming an interlayer dielectric (ILD) layer on the gate structure; forming a first contact hole in the ILD layer adjacent to the gate structure; and forming a cap layer in the recess, in which a top surface of the cap layer is even with or lower than a top surface of the substrate.
12 Citations
9 Claims
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1. A semiconductor device, comprising:
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a substrate; a gate structure on the substrate; an epitaxial layer in the substrate adjacent to the gate structure; and a cap layer on the epitaxial layer, wherein a top surface of the cap layer is even with or lower than a top surface of the substrate, the top surface of the cap layer comprises a planar surface parallel to a top surface of the substrate, and a top surface of the epitaxial layer comprises a first planar inclined sidewall extending upward from one end of a curved surface, and a second planar inclined sidewall extending upward from other end of the curved surface, wherein the curved surface is substantially semicircular under cross-sectional view and is in direct contact to sidewalls and a bottom surface of the cap layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device, comprising:
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a gate structure on a substrate; an epitaxial layer in the substrate adjacent to the gate structure; and a cap layer on the epitaxial layer, wherein a topmost surface of the cap layer comprises an inverted V-shape and a peak point included by the inverted V-shape without contacting the substrate directly is even with or lower than a top surface of the substrate.
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Specification