NAND memory cell string having a stacked select gate structure and process for for forming same
First Claim
1. A memory string, comprising:
- a channel formed in a cylinder of semiconducting material, extending vertically from source in a substrate to a drain overlying the substratea plurality of core cells serially connected along the channel between a source select gate and a drain select gate, each core cell including an internal wordline separated from the channel by a first stack of layers including a charge trapping layer; and
wherein the internal wordlines of the plurality of core cells are formed by alternating conducting and dielectric layers overlying the substrate and through which the channel extends.
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Abstract
A memory string is disclosed including a plurality of core cells serially connected between a source select gate and a drain select gate along a channel. Each core cell includes a wordline separated from the channel by a stack of layers including a charge trapping layer. At least one of the source and drain select gates is a stacked select gate with a plurality of components, including a first component adjacent to the plurality of core cells and a second component separated from the core cells by the first component. The first component includes a wordline separated from the channel by a stack of layers including a charge trapping layer, and a distance between the wordline of the first component and the wordline of a first core cell in the plurality of core cells is substantially the same as distances between each wordline in the plurality of word core cells.
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Citations
12 Claims
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1. A memory string, comprising:
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a channel formed in a cylinder of semiconducting material, extending vertically from source in a substrate to a drain overlying the substrate a plurality of core cells serially connected along the channel between a source select gate and a drain select gate, each core cell including an internal wordline separated from the channel by a first stack of layers including a charge trapping layer; and wherein the internal wordlines of the plurality of core cells are formed by alternating conducting and dielectric layers overlying the substrate and through which the channel extends. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification