Three-dimensional vertical memory
First Claim
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1. A three-dimensional vertical memory (3D-MV), comprising:
- a semiconductor substrate including a substrate circuit;
a plurality of horizontal address lines above said substrate circuit;
a plurality of memory holes penetrating through said horizontal address lines;
a plurality of programmable layers covering the sidewalls of said memory holes;
a plurality of vertical address lines formed in said memory holes;
each of said horizontal address lines including at least a first region and a second region outside said first region, wherein said first region comprises at least a lightly-doped semiconductor material in contact with and surrounding at least one of said programmable layers in at least one of said memory holes, and said first region has a higher resistivity than said second region.
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Abstract
In a shared three-dimensional vertical memory (3D-MV), each horizontal address line comprises at least two regions: a lightly-doped region and a low-resistivity region. The lightly-doped region is formed around selected memory holes and shared by a plurality of low-leakage memory cells. The low-resistivity region forms a conductive network to reduce the resistance of the horizontal address line.
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Citations
20 Claims
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1. A three-dimensional vertical memory (3D-MV), comprising:
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a semiconductor substrate including a substrate circuit; a plurality of horizontal address lines above said substrate circuit; a plurality of memory holes penetrating through said horizontal address lines; a plurality of programmable layers covering the sidewalls of said memory holes; a plurality of vertical address lines formed in said memory holes; each of said horizontal address lines including at least a first region and a second region outside said first region, wherein said first region comprises at least a lightly-doped semiconductor material in contact with and surrounding at least one of said programmable layers in at least one of said memory holes, and said first region has a higher resistivity than said second region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A three-dimensional vertical memory (3D-MV), comprising:
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a semiconductor substrate including a substrate circuit; a plurality of horizontal address lines stacked above said substrate circuit; a plurality of memory holes penetrating through said horizontal address lines; a plurality of programmable layers covering the sidewalls of said memory holes; a plurality of vertical address lines formed in said memory holes; each of said horizontal address lines including at least a first region and a second region outside said first region, wherein said first region comprises at least a lightly-doped semiconductor material surrounding at least three adjacent ones of said vertical address lines, and said first region has a higher resistivity than said second region. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A semiconductor memory, comprising:
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a plurality of first-state memory cells including at least a first-state memory cell; a plurality of second-state memory cells including at least a low-leakage memory cell and at least a high-leakage memory cell; an address line coupling said first-state memory cell, said low-leakage memory cell and said high-leakage memory cell; wherein said high-leakage memory cell has a smaller resistance than said low-leakage memory cell; and
, said low-leakage memory cell has a smaller resistance than said first-state memory cell. - View Dependent Claims (17, 18, 19, 20)
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Specification