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Thin film transistor and display device

  • US 10,566,457 B2
  • Filed: 08/30/2013
  • Issued: 02/18/2020
  • Est. Priority Date: 08/31/2012
  • Status: Active Grant
First Claim
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1. A thin film transistor comprising;

  • a gate electrode,an oxide semiconductor layer, anda gate insulator film,wherein;

    the oxide semiconductor layer is configured as a channel layer, and the oxide semiconductor layer comprises at least one metal selected from the group consisting of In, Ga, Zn, and Sn, with the proviso that an oxide semiconductor consisting of Sn and at least one of In and Zn is excluded,the gate insulator film is interposed between the gate electrode and the channel layer,the gate insulator film is a laminate structure comprising a first layer, which is in direct contact with the oxide semiconductor layer, and one or more other layers,the first layer of the gate insulator film has a hydrogen concentration of 4 atomic % or lower, andthe one or more other layers of the gate insulator film have a hydrogen concentration higher than the first layer.

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