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Solar cell, method for manufacturing same and solar cell module

  • US 10,566,470 B2
  • Filed: 01/07/2016
  • Issued: 02/18/2020
  • Est. Priority Date: 01/07/2015
  • Status: Active Grant
First Claim
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1. A solar cell comprising:

  • a photoelectric conversion section including a semiconductor junction having a light-receiving surface and a back surface opposite the light-receiving surface;

    a plurality of light-receiving-side finger electrodes on the light-receiving surface of the photoelectric conversion section, extending in a direction;

    a plurality of back-side finger electrodes on the back surface of the photoelectric conversion section;

    a first insulating layer over the light-receiving surface of the photoelectric conversion section; and

    a plurality of first isolated plating metal layer pieces over the first insulating layer, the plurality of first isolated plating metal layer pieces each having a substantially circular shape, each having a diameter less than a width of each of the light-receiving-side finger electrodes and being isolated from the light-receiving-side finger electrodes and the back-side finger electrodes on the first insulating layer,whereinthe light-receiving-side finger electrodes of the plurality of light-receiving-side finger electrodes each include;

    a first metal seed layer between the photoelectric conversion section and the first insulating layer; and

    a first plating metal layer over the first insulating layer, the first plating metal layer being coupled with the first metal seed layer by way of openings in the first insulating layer,the plurality of first isolated plating metal layer pieces are distributed in a first isolated plating metal crowded region over the first insulating layer having an area density of the plurality of first isolated plating metal layer pieces included in the first isolated plating metal crowded region that is two times or more than an average area density of the plurality of first isolated plating metal layer pieces over an entirety of a region over the first insulating layer free from having the light-receiving-side finger electrodes,the first isolated plating metal crowded region includes 20 or more of the first isolated plating metal layer pieces distributed over the entire first isolated plating metal crowded region,the first isolated plating metal crowded region extends along the light-receiving-side finger electrodes and is located 20 μ

    m or more and 200 μ

    m or less away from the light-receiving-side finger electrodes in a direction perpendicular to the extending direction of the light-receiving-side finger electrodes, andthe first metal seed layer is not provided under the first isolated plating metal crowded region.

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