Solar cell, method for manufacturing same and solar cell module
First Claim
1. A solar cell comprising:
- a photoelectric conversion section including a semiconductor junction having a light-receiving surface and a back surface opposite the light-receiving surface;
a plurality of light-receiving-side finger electrodes on the light-receiving surface of the photoelectric conversion section, extending in a direction;
a plurality of back-side finger electrodes on the back surface of the photoelectric conversion section;
a first insulating layer over the light-receiving surface of the photoelectric conversion section; and
a plurality of first isolated plating metal layer pieces over the first insulating layer, the plurality of first isolated plating metal layer pieces each having a substantially circular shape, each having a diameter less than a width of each of the light-receiving-side finger electrodes and being isolated from the light-receiving-side finger electrodes and the back-side finger electrodes on the first insulating layer,whereinthe light-receiving-side finger electrodes of the plurality of light-receiving-side finger electrodes each include;
a first metal seed layer between the photoelectric conversion section and the first insulating layer; and
a first plating metal layer over the first insulating layer, the first plating metal layer being coupled with the first metal seed layer by way of openings in the first insulating layer,the plurality of first isolated plating metal layer pieces are distributed in a first isolated plating metal crowded region over the first insulating layer having an area density of the plurality of first isolated plating metal layer pieces included in the first isolated plating metal crowded region that is two times or more than an average area density of the plurality of first isolated plating metal layer pieces over an entirety of a region over the first insulating layer free from having the light-receiving-side finger electrodes,the first isolated plating metal crowded region includes 20 or more of the first isolated plating metal layer pieces distributed over the entire first isolated plating metal crowded region,the first isolated plating metal crowded region extends along the light-receiving-side finger electrodes and is located 20 μ
m or more and 200 μ
m or less away from the light-receiving-side finger electrodes in a direction perpendicular to the extending direction of the light-receiving-side finger electrodes, andthe first metal seed layer is not provided under the first isolated plating metal crowded region.
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Accused Products
Abstract
The solar cell includes a plurality of light-receiving-side finger electrodes on a light-receiving surface of a photoelectric conversion section having a semiconductor junction. The light-receiving surface of the photoelectric conversion section is covered with a first insulating layer. Each light-receiving-side finger electrodes include: a first metal seed layer provided between the photoelectric conversion section and the first insulating layer; and a first plating metal layer being conduction with the first metal seed layer through openings formed in the first insulating layer. The solar cell includes an isolated plating metal layer pieces contacting neither the light-receiving-side finger electrodes nor the back-side finger electrodes. On the surface of the first insulating layer, an isolated plating metal crowded region is present in a form of a band-shape extending parallel to an extending direction of the light-receiving-side finger electrodes.
11 Citations
13 Claims
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1. A solar cell comprising:
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a photoelectric conversion section including a semiconductor junction having a light-receiving surface and a back surface opposite the light-receiving surface; a plurality of light-receiving-side finger electrodes on the light-receiving surface of the photoelectric conversion section, extending in a direction; a plurality of back-side finger electrodes on the back surface of the photoelectric conversion section; a first insulating layer over the light-receiving surface of the photoelectric conversion section; and a plurality of first isolated plating metal layer pieces over the first insulating layer, the plurality of first isolated plating metal layer pieces each having a substantially circular shape, each having a diameter less than a width of each of the light-receiving-side finger electrodes and being isolated from the light-receiving-side finger electrodes and the back-side finger electrodes on the first insulating layer, wherein the light-receiving-side finger electrodes of the plurality of light-receiving-side finger electrodes each include; a first metal seed layer between the photoelectric conversion section and the first insulating layer; and a first plating metal layer over the first insulating layer, the first plating metal layer being coupled with the first metal seed layer by way of openings in the first insulating layer, the plurality of first isolated plating metal layer pieces are distributed in a first isolated plating metal crowded region over the first insulating layer having an area density of the plurality of first isolated plating metal layer pieces included in the first isolated plating metal crowded region that is two times or more than an average area density of the plurality of first isolated plating metal layer pieces over an entirety of a region over the first insulating layer free from having the light-receiving-side finger electrodes, the first isolated plating metal crowded region includes 20 or more of the first isolated plating metal layer pieces distributed over the entire first isolated plating metal crowded region, the first isolated plating metal crowded region extends along the light-receiving-side finger electrodes and is located 20 μ
m or more and 200 μ
m or less away from the light-receiving-side finger electrodes in a direction perpendicular to the extending direction of the light-receiving-side finger electrodes, andthe first metal seed layer is not provided under the first isolated plating metal crowded region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
wherein the back-side finger electrodes of the plurality of back-side finger electrodes each include; a second metal seed layer between the photoelectric conversion section and the second insulating layer; and a second plating metal layer, the second insulating layer being between the second plating metal layer and the second metal seed layer, and the second plating metal layer being coupled with the second metal seed layer by way of openings in the second insulating layer, and the area density of the first isolated plating metal layer pieces over the first insulating layer is greater than an area density of the second isolated plating metal layer pieces over the second insulating layer.
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3. The solar cell according to claim 2, wherein each of the first insulating layer and the second insulating layer is an inorganic layer having a thickness of 10 to 200 nm.
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4. The solar cell according to claim 2, wherein the first plating metal layer, the second plating metal layer and the first isolated plating metal layer pieces each contain copper.
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5. The solar cell according to claim 1, wherein a separation distance between two adjacent light-receiving-side finger electrodes is larger than a separation distance between two adjacent back-side finger electrodes.
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6. The solar cell according to claim 1, wherein
the photoelectric conversion section includes: -
a conductive single-crystalline silicon substrate having a first surface and a second surface opposite the first surface; a first silicon based thin-film having a first conductivity-type over the first surface of the conductive single-crystalline silicon substrate; a first transparent electrode layer over the first surface of the conductive single-crystalline silicon substrate; a second silicon based thin-film having a second conductivity-type on a second surface side of the conductive single-crystalline silicon substrate; and a second transparent electrode layer on the second surface side of the conductive single-crystalline silicon substrate.
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7. The solar cell according to claim 1, wherein the first isolated plating metal crowded region has a band-shape.
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8. The solar cell according to claim 1, wherein the diameter of each first isolated plating metal layer piece is 0.1 μ
- m to 10 μ
m.
- m to 10 μ
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9. A solar cell module comprising:
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a solar cell according to claim 1, the solar cell having a light-receiving side and a back side, a light-receiving-side protecting member on the light-receiving side of the solar cell; a first encapsulant between the light-receiving side of the solar cell and the light-receiving-side protecting member; a back-side protecting member on the back side of the solar cell; and a second encapsulant between the back side of the solar cell and the back-side protecting member.
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10. The solar cell module according to claim 9, wherein
the light-receiving-side protecting member comprises glass, and the second encapsulant includes a polyolefin resin. -
11. The solar cell module according to claim 9, wherein the back-side protecting member includes no metal foil.
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12. The solar cell module according to claim 9, wherein
the solar cell comprises a second insulating layer on the back surface of the photoelectric conversion section, and refractive indices n1, n2 and n3 satisfy a relation: - n1<
n2<
n3, where n1 is a refractive index of the second encapsulant, n2 is a refractive index of the second insulating layer, and n3 is a refractive index of an outermost layer on the back side of the photoelectric conversion section.
- n1<
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13. The solar cell module according to claim 9, wherein the back-side protecting member includes a black resin layer having visible ray absorbance and an infrared reflection layer on the black resin layer stacked in this order on the back side of the solar cell.
Specification