Optical sensor and manufacturing method thereof
First Claim
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1. An optical sensor, comprising:
- a semiconductive substrate;
a light sensing region on the semiconductive substrate;
a waveguide region comprising;
a first dielectric layer comprising a first refractive index;
a second dielectric layer comprising a second refractive index; and
a third dielectric layer comprising a third refractive index,wherein the first dielectric layer is disposed between the second dielectric layer and the third dielectric layer, and the third dielectric layer is disposed on the first dielectric layer,wherein the waveguide region is divided into a wave inset portion for receiving a light and a waveguide region adjacent to the wave insert portion and comprising at least one sample holding portion in the third dielectric layer, and light incident from the wave insert portion is guided to the sample holding portion through the first dielectric layer,wherein the second refractive index and the third refractive index are smaller than the first refractive index; and
wherein an interconnect region, comprising at least one circuitry configured to process and/or output data information generated by the light sensing region, is below the waveguide region, and the interconnect region is disposed above the light sensing region.
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Abstract
Some embodiments of the present disclosure provide an optical sensor. The optical sensor includes a semiconductive substrate; a light sensing region on the semiconductive substrate; a waveguide region configured to guide light from a wave insert portion through a waveguide portion and to a sample holding portion; and an interconnect region below the waveguide region, and the interconnect region being disposed above the light sensing region. The waveguide portion includes a first dielectric layer comprising a first refractive index and at least one second dielectric layer comprising a second refractive index, wherein the second refractive index is smaller than the first refractive index.
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Citations
13 Claims
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1. An optical sensor, comprising:
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a semiconductive substrate; a light sensing region on the semiconductive substrate; a waveguide region comprising; a first dielectric layer comprising a first refractive index; a second dielectric layer comprising a second refractive index; and a third dielectric layer comprising a third refractive index, wherein the first dielectric layer is disposed between the second dielectric layer and the third dielectric layer, and the third dielectric layer is disposed on the first dielectric layer, wherein the waveguide region is divided into a wave inset portion for receiving a light and a waveguide region adjacent to the wave insert portion and comprising at least one sample holding portion in the third dielectric layer, and light incident from the wave insert portion is guided to the sample holding portion through the first dielectric layer, wherein the second refractive index and the third refractive index are smaller than the first refractive index; and wherein an interconnect region, comprising at least one circuitry configured to process and/or output data information generated by the light sensing region, is below the waveguide region, and the interconnect region is disposed above the light sensing region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification