Receiver unit
First Claim
1. A receiver component comprising:
- a number N of partial voltage sources implemented as semiconductor diodes connected to one another in series, so that a number N of partial voltage sources generate a source voltage, each of the partial voltage sources have a semiconductor diode with a p-n junction, the semiconductor diode having a p-doped absorption layer, the p absorption layer being passivated by a p-doped passivation layer with a larger band gap than a band gap of the p absorption layer, the semiconductor diodes having an n absorption layer that is passivated by an n-doped passivation layer with a larger band gap than a band gap of the n absorption layer; and
a tunnel diode formed between each sequential pair of partial voltage sources,wherein the partial voltage sources and the tunnel diodes are monolithically integrated together and jointly form a first stack with a top and a bottom,wherein the number N of partial voltage sources is greater than or equal to two,wherein light strikes the first stack on the top on the surface of the first stack, the first stack having a first electrical contact on the surface and a second electrical contact on the bottom,wherein the first stack has a total thickness of less than 12 μ
m,wherein the stack is arranged on a semiconductor substrate,wherein a semiconductor material of the semiconductor diodes is made of III-V materials,wherein the substrate of the receiver component includes germanium or gallium arsenide, andwherein a continuous, shoulder-like edge is formed in a vicinity of the bottom of the first stack of the receiver component,wherein the tunnel diode has, between the semiconductor diodes, at least two semiconductor layers with a higher band gap than a band gap of the p/n absorption layers of the semiconductor diodes,wherein the partial source voltages of the individual partial voltage sources have a deviation of less than 20% from one another,wherein the semiconductor substrate is monolithically connected to the stack and to a transistor,wherein a control input of the transistor is connected to one of the two electrical contacts, andwherein the receiver component does not have a quantum well structure.
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Accused Products
Abstract
A receiver component having a number of partial voltage sources implemented as semiconductor diodes connected to one another in series, so that the number of partial voltage sources generate a source voltage, and each of the partial voltage sources has a semiconductor diode with a p-n junction, and the semiconductor diode has a p-doped absorption layer. The p absorption layer is passivated by a p-doped passivation layer with a larger band gap than the band gap of the p absorption layer, and the semiconductor diode has an n absorption layer that is passivated by an n-doped passivation layer with a larger band gap than the band gap of the n absorption layer. The partial source voltages of the individual partial voltage sources have a deviation of less than 20% from one another, and a tunnel diode is formed between each sequential pair of partial voltage sources.
16 Citations
18 Claims
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1. A receiver component comprising:
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a number N of partial voltage sources implemented as semiconductor diodes connected to one another in series, so that a number N of partial voltage sources generate a source voltage, each of the partial voltage sources have a semiconductor diode with a p-n junction, the semiconductor diode having a p-doped absorption layer, the p absorption layer being passivated by a p-doped passivation layer with a larger band gap than a band gap of the p absorption layer, the semiconductor diodes having an n absorption layer that is passivated by an n-doped passivation layer with a larger band gap than a band gap of the n absorption layer; and a tunnel diode formed between each sequential pair of partial voltage sources, wherein the partial voltage sources and the tunnel diodes are monolithically integrated together and jointly form a first stack with a top and a bottom, wherein the number N of partial voltage sources is greater than or equal to two, wherein light strikes the first stack on the top on the surface of the first stack, the first stack having a first electrical contact on the surface and a second electrical contact on the bottom, wherein the first stack has a total thickness of less than 12 μ
m,wherein the stack is arranged on a semiconductor substrate, wherein a semiconductor material of the semiconductor diodes is made of III-V materials, wherein the substrate of the receiver component includes germanium or gallium arsenide, and wherein a continuous, shoulder-like edge is formed in a vicinity of the bottom of the first stack of the receiver component, wherein the tunnel diode has, between the semiconductor diodes, at least two semiconductor layers with a higher band gap than a band gap of the p/n absorption layers of the semiconductor diodes, wherein the partial source voltages of the individual partial voltage sources have a deviation of less than 20% from one another, wherein the semiconductor substrate is monolithically connected to the stack and to a transistor, wherein a control input of the transistor is connected to one of the two electrical contacts, and wherein the receiver component does not have a quantum well structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification