×

Patterning of a magnetoresistance structure including two hard masks

  • US 10,566,526 B1
  • Filed: 09/05/2018
  • Issued: 02/18/2020
  • Est. Priority Date: 09/05/2018
  • Status: Active Grant
First Claim
Patent Images

1. A method, comprising:

  • depositing on a substrate a magnetoresistance stack comprising a plurality of layers comprising a first set of one or more magnetoresistance layers and a second set of one or more magnetoresistance layers;

    depositing a first hard mask on the magnetoresistance stack;

    depositing a first photoresist on the first hard mask;

    patterning the first photoresist using photolithography to expose portions of the first hard mask;

    etching the exposed portions of the first hard mask to expose a portion of the magnetoresistance stack;

    stripping the first photoresist;

    etching the exposed portions of the magnetoresistance stack and the first hard mask to form a first intermediate structure having a base and a pillar structure;

    depositing an etch barrier on the first intermediate structure;

    depositing a second hard mask on the etch barrier;

    depositing a second photoresist on the second hard mask;

    patterning the second photoresist using photolithography to expose portions of the second hard mask;

    etching the exposed portions of the second hard mask;

    stripping the second photoresist;

    etching a portion of the second hard mask, a portion of the etch barrier and a portion of the base to form a second intermediate structure; and

    depositing a capping barrier on the second intermediate structure.

View all claims
  • 6 Assignments
Timeline View
Assignment View
    ×
    ×