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Manufacturable multi-emitter laser diode

  • US 10,566,767 B2
  • Filed: 11/14/2016
  • Issued: 02/18/2020
  • Est. Priority Date: 02/10/2014
  • Status: Active Grant
First Claim
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1. A multi-emitter laser diode device, the laser diode device comprising:

  • a carrier chip singulated from a carrier wafer, the carrier chip being characterized by a length and a width;

    a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip with a bonding material at a bond region, the substrate having multiple epitaxial mesa dice regions positioned at an epitaxial wafer die pitch, the epitaxial wafer die pitch being designated as a first pitch;

    each of the epitaxial mesa dice regions arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions, each of the plurality of epitaxial mesa dice regions comprising epitaxial material;

    the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the at least one active layer;

    a plurality of laser diode stripe regions formed in a ridge region in a top portion of the plurality of epitaxial mesa dice regions and away from the bonding material in the bond region;

    each of the laser diode stripe regions configured with a pair of facets wherein a first facet is configured on a first end of the stripe and a second facet is configured on the second end of the stripe region to form a cavity region; and

    wherein a pair of the laser diode stripe regions is spaced by a third pitch from an adjacent pair of the laser diode stripe regions, wherein a pair of the laser diode stripe regions form a multiple-stripe laser die, the second pitch is a first integer multiple, N, of the epitaxial wafer die pitch, and the third pitch is a second integer multiple, M, of the epitaxial wafer die pitch, wherein N≥

    1 and M>

    N.

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