Model-based scanner tuning systems and methods

• US 10,569,469 B2
• Filed: 10/28/2014
• Issued: 02/25/2020
• Est. Priority Date: 06/03/2008
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Cao, Yu, Shao, Wenjin, Goossens, Ronaldus Johannes Gijsbertus, Ye, Jun, Koonmen, James Patrick
• Primary Examiner(s): Chad, Aniss
• Application Number:
  US14/525,704
• Publication Number:
  US 20150045935A1
• Time in Patent Office: 1,946 Days
• CPC Class Codes: B29C 64/386 Data acquisition or data processing for additive manufacturing
• CPC Class Codes: G03F 7/70091 Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
• CPC Class Codes: G03F 7/70458 Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70516 Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
• CPC Class Codes: G03F 7/70525 Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
• CPC Class Codes: G06F 2113/18 Chip packaging
• CPC Class Codes: G06F 30/00 Computer-aided design [CAD]
• CPC Class Codes: G06F 30/20 Design optimisation, verification or simulation optimisation, verification or simulation of circuit designs G06F30/30
• CPC Class Codes: G06F 30/398 Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] optical proximity correction [OPC] design processes G03F1/36

Abstract

Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.

Claims

1. A method comprising:

obtaining a set of tunable parameters of a lithographic apparatus model that characterizes imaging performance of a lithographic apparatus;

simulating, by a hardware computer system, a wafer contour based on a design layout and a simulated lithographic process using an initial set of values of the set of tunable parameters;

comparing the simulated wafer contour with a reference wafer contour to generate a differential metric; and

adjusting one or more values of the set of tunable parameters until the differential metric has a desired value such that imaging performance of the lithographic apparatus is within a tolerance to imaging performance of a reference lithographic apparatus, the one or more values of the set of tunable parameters configured to guide setting or change of a physical configuration of a physical lithographic apparatus for optical imaging onto a physical substrate.

2. The method of claim 1, wherein the to-be-tuned lithographic apparatus belongs to a set of lithographic apparatuses, one of which is designated as the reference lithographic apparatus.

3. The method of claim 1, further comprising changing the designation of the reference lithographic apparatus from one lithographic apparatus to another lithographic apparatus within a set of lithographic apparatuses.

4. The method of claim 1, wherein one or both of the lithographic apparatus and the reference lithographic apparatus are virtual lithographic apparatuses represented by respective apparatus models.

5. The method of claim 1, wherein adjusting one or more values of the set of tunable parameters comprises calculating a cost function that represents the differential metric and that is a function of the set of tunable parameters.

6. The method of claim 1, wherein an initial set of values of the set of tunable parameters is obtained by lithographic apparatus metrology.

7. The method of claim 1, wherein the reference wafer contour is a measured wafer contour of one or more wafers produced by the reference lithographic apparatus.

8. The method of claim 7, wherein the reference wafer contour is of one or more wafers produced by a reference lithographic process.

9. The method of claim 7, wherein the reference wafer contour is produced using a reference design layout.

10. The method of claim 1, wherein the differential metric is obtained using an optical proximity correction (OPC) verification tool.

11. The method of claim 10, wherein hot spots identified by the OPC verification tool are added to update the design layout.

12. The method of claim 11, wherein the values of the set of tunable parameters are updated based on the updated design layout.

13. The method of claim 1, wherein the lithographic apparatus model comprises a differential model derived from a baseline model of the lithographic apparatus, the baseline model having parameters corresponding to parameters of a reference lithographic apparatus.

14. The method of claim 1, wherein the imaging performance of the lithographic apparatus is characterized by differences in parametric values for one or more selected from:

a design layout parameter, an optical parameter, or a lithography process parameter.

15. A computer program product comprising a non-transitory computer readable medium having instructions thereon configured to cause a computer to at least:

obtain a set of tunable parameters of a lithographic apparatus model that characterizes imaging performance of a lithographic apparatus;

simulate a wafer contour based on a design layout and a simulated lithographic process using an initial set of values of the set of tunable parameters;

compare the simulated wafer contour with a reference wafer contour to generate a differential metric; and

adjust one or more values of the set of tunable parameters until the differential metric has a desired value such that imaging performance of the lithographic apparatus is within a tolerance to imaging performance of a reference lithographic apparatus, the one or more values of the set of tunable parameters configured to guide setting or change of a physical configuration of a physical lithographic apparatus for optical imaging onto a physical substrate.

16. The computer program product of claim 15, wherein the instructions are further configured to change the designation of the reference lithographic apparatus from one lithographic apparatus to another lithographic apparatus within a set of lithographic apparatuses.

17. The computer program product of claim 15, wherein the instructions configured to adjust one or more values of the set of tunable parameters are further configured to calculate a cost function that represents the differential metric and that is a function of the set of tunable parameters.

18. The computer program product of claim 15, wherein an initial set of values of the set of tunable parameters is obtained by lithographic apparatus metrology.

19. The computer program product of claim 15, wherein the reference wafer contour is a measured wafer contour of one or more wafers produced by the reference lithographic apparatus.

20. The computer program product of claim 15, wherein the imaging performance of the lithographic apparatus is characterized by differences in parametric values for one or more selected from:

a design layout parameter, an optical parameter, or a lithography process parameter.