Organosilane precursors for ALD/CVD silicon-containing film applications and methods of using the same

• US 10,570,513 B2
• Filed: 12/10/2015
• Issued: 02/25/2020
• Est. Priority Date: 12/13/2014
• Status: Active Grant

• Current Assignee: American Air Liquide Incorporated (L'Air Liquide SA)
• Original Assignee: American Air Liquide Incorporated (L'Air Liquide SA)
• Inventors: Kuchenbeiser, Glenn, Fafard, Claudia
• Primary Examiner(s): Brooks, Clinton A
• Assistant Examiner(s): Adzamli, Kofi
• Application Number:
  US15/535,631
• Publication Number:
  US 20180355483A1
• Time in Patent Office: 1,538 Days
• Field of Search: None
• CPC Class Codes: C07F 7/025 without C-silicon linkages
• CPC Class Codes: C09D 4/00 Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 16/56 After-treatment

Abstract

Disclosed are organosilane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed organosilane precursors have the following formula: SiH_x(RN—(CR)_n—NR)_y(NRR)_z wherein R may each independently be H, a C₁ to C₆ alkyl group, or a C₃-C₂₀ aryl or heterocycle group, x+y+z=4 and n, x, y and z are integers, provided that x≠3 when y=1. Preferably, n=1 to 3, x=0 to 2, y=1 to 2, and z=1 to 3.

Claims

1. A Si-containing film forming composition comprising an organosilane precursor having the formula:

SiH_x(RN—

(CR)_n—

NR)_y(NRR)_z;

wherein each R is independently selected from the group consisting of H, a C₁ to C₆ alkyl group, and a C₃-C₂₀ aryl or heterocycle group;

n=1 or 3;

x=0, 1, or 2;

y=1 or 2; and

z=1, 2, or 3; and

x+y+z=4, provided that x≠

2 when y=2.

2. The Si-containing film forming composition of claim 1, wherein n=1, x=2, y=1, z=1, and the organosilane precursor has the formula:

3. The Si-containing film forming composition of claim 2, wherein the organosilane precursor is selected from the group consisting of:

4. The Si-containing film forming composition of claim 3, wherein the organosilane precursor is SiH₂(NMe₂)(iPr-amd) or SiH₂(NEt₂)(iPr-amd).

5. The Si-containing film forming composition of claim 1, wherein n=1, x=1, y=1, z=2, and the organosilane precursor has the formula:

6. The Si-containing film forming composition of claim 5, wherein the organosilane precursor is selected from the group consisting of:

7. The Si-containing film forming composition of claim 6, wherein the organosilane precursor is SiH(NMe₂)₂(iPr-amd).

8. The Si-containing film forming composition of claim 1, wherein n=3, x=2, y=1, z=1, and the organosilane precursor has the formula:

9. The Si-containing film forming composition of claim 8, wherein the organosilane precursor is selected from the group consisting of:

10. The Si-containing film forming composition of claim 1, wherein n=3, x=1, y=1, z=2, and the organosilane precursor has the formula:

11. The Si-containing film forming composition of claim 1, wherein the organosilane precursor is selected from the group consisting of:

12. The Si-containing film forming composition of claim 1, wherein n=1, x=1, y=2, z=1, and the organosilane precursor has the formula:

13. The Si-containing film forming composition of claim 12, wherein the organosilane precursor is selected from the group consisting of:

14. A method of depositing a Si-containing layer on a substrate, the method comprising:

introducing a Si-containing film forming composition of claim 1 into a reactor having a substrate disposed therein; and

depositing at least part of the organosilane precursor onto the substrate to form a Si-containing layer using a vapor deposition method.

15. The method of claim 14, further comprising introducing into the reactor a reactant, wherein the reactant is selected from the group consisting of H₂, NH₃, (SiH₃)₃N, hydridosilanes, chlorosilanes, chloropolysilanes, alkysilanes, hydrazines, organic amines, pyrazoline, pyridine, B-containing molecules, alkyl metals, radical species thereof, and mixtures thereof.