Fabrication of fin field effect transistor complementary metal-oxide-semiconductor devices with uniform hybrid channels

• US 10,573,566 B2
• Filed: 10/01/2018
• Issued: 02/25/2020
• Est. Priority Date: 05/12/2017
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Bi, Zhenxing, Cheng, Kangguo, Xu, Peng, Yang, Jie
• Primary Examiner(s): Rodela, Eduardo A
• Application Number:
  US16/148,433
• Publication Number:
  US 20190035695A1
• Time in Patent Office: 512 Days
• CPC Class Codes: H01L 21/823431 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 21/823807 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 21/823821 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 21/823878 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 21/823892 with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
• CPC Class Codes: H01L 27/0886 including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 27/0924 including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/1083 with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
• CPC Class Codes: H01L 29/165 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/41791 for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/66537 using a self aligned punch through stopper or threshold implant under the gate region H01L29/66606 takes precedence
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/66803 with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H10B 12/056 the transistor being a FinFET

Abstract

A method of forming complementary vertical fins and vertical fins with uniform heights, including, forming a trench in a region of a substrate, wherein the trench extends through an upper portion of the substrate and a buried punch-through stop layer, and extends into a lower portion of the substrate, forming a reformed punch-through stop layer in a bottom portion of the trench, forming a fin formation region on the reformed punch-through stop layer, and forming a complementary vertical fin from the fin formation region and a vertical fin from the upper portion of the substrate on a first region of the substrate adjacent to the second region.

Claims

1. A plurality of complementary vertical fins and vertical fins with uniform heights, comprising:

a substrate;

one or more punch-through stop pillars on a first region of the substrate;

one or more complementary punch-through stop pillars on a second region of the substrate adjacent to the first region, wherein the complementary punch-through stop pillars are different heights;

a complementary vertical fin on each of the one or more complementary punch-through stop pillars; and

a vertical fin on each of the one or more punch-through stop pillars.

2. The plurality of complementary vertical fins and vertical fins of claim 1, wherein the material of the one or more punch-through stop pillars is selected from the group consisting of arsenic-doped silicon, phosphorus-doped silicon, arsenic-doped silicon-germanium, and phosphorus-doped silicon-germanium.

3. The plurality of complementary vertical fins and vertical fins of claim 2, wherein each complementary vertical fin is silicon-germanium.

4. The plurality of complementary vertical fins and vertical fins of claim 1, wherein the material of the one or more complementary punch-through stop pillars is selected from the group consisting of boron-doped silicon and gallium-doped silicon.

5. The plurality of complementary vertical fins and vertical fins of claim 4, wherein each vertical fin is silicon.

6. The plurality of complementary vertical fins and vertical fins of claim 1, wherein the punch-through stop pillars have a uniform height.

7. The plurality of complementary vertical fins and vertical fins of claim 6, wherein the vertical fins and complementary vertical fins have approximately the same height.

8. The plurality of complementary vertical fins and vertical fins of claim 6, wherein each of the one or more complementary punch-through stop pillars is on an extension region.

9. A plurality of complementary vertical fins and vertical fins with uniform heights, comprising:

a substrate;

one or more punch-through stop pillars on a first region of the substrate;

one or more complementary punch-through stop pillars on a second region of the substrate adjacent to the first region, wherein the complementary punch-through stop pillars are different height;

a complementary vertical fin on each of the one or more complementary punch-through stop pillars, wherein each complementary vertical fin is silicon-germanium; and

a vertical fin on each of the one or more punch-through stop pillars, wherein each vertical fin is silicon.

10. The plurality of complementary vertical fins and vertical fins of claim 9, wherein the complementary vertical fin on each of the one or more complementary punch-through stop pillars has a germanium concentration in the range of about 10 at. % Ge to about 85 at. % Ge.

11. The plurality of complementary vertical fins and vertical fins of claim 9, wherein the complementary vertical fin on each of the one or more complementary punch-through stop pillars and the vertical fin on each of the one or more punch-through stop pillars have approximately the same height.

12. The plurality of complementary vertical fins and vertical fins of claim 11, further comprising an isolation layer on the one or more complementary punch-through stop pillars and the one or more punch-through stop pillars.

13. The plurality of complementary vertical fins and vertical fins of claim 12, further comprising a gate structure on each vertical fin, and a gate structure on each complementary vertical fin.

14. A plurality of complementary vertical fins and vertical fins with uniform heights, comprising:

six or more extension regions on a substrate, wherein at least three extension regions are on a first region of the substrate and at least three extension regions are on a second region of the substrate adjacent to the first region;

a punch-through stop pillar on each of the at least three extension regions on the first region of the substrate; and

a complementary punch-through stop pillar on each of the at least three extension regions are on the second region of the substrate, wherein the complementary punch-through stop pillars are not a uniform height.

15. The plurality of complementary vertical fins and vertical fins with uniform heights of claim 14, wherein the extension regions below the complementary punch-through stop pillars have curved or sloped top surfaces at the interface with the complementary punch-through stop pillars.

16. The plurality of complementary vertical fins and vertical fins with uniform heights of claim 15, further comprising a complementary vertical fin on each of the one or more complementary punch-through stop pillars, and a vertical fin on each of the one or more punch-through stop pillars.

17. The plurality of complementary vertical fins and vertical fins with uniform heights of claim 16, wherein the vertical fins and complementary vertical fins have approximately the same height.

18. The plurality of complementary vertical fins and vertical fins with uniform heights of claim 17, wherein the dopant concentration of the punch-through stop pillars are in the range of about 5×

10¹⁷/cm³ to about 2×

10¹⁹/cm³, and the dopant concentration of the complementary punch-through stop pillars are in the range of about 5×

10¹⁷/cm³ to about 2×

10¹⁹/cm³.