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Super long channel device within VFET architecture

  • US 10,573,745 B2
  • Filed: 05/23/2017
  • Issued: 02/25/2020
  • Est. Priority Date: 05/23/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a pair of semiconductor fins formed on a substrate;

    a semiconductor pillar formed between the semiconductor fins on the substrate;

    a bottom doped region that extends under all of the semiconductor fins and under only a part of the semiconductor pillar; and

    a conductive gate formed over a channel region of the semiconductor fins and a channel region of the semiconductor pillar;

    wherein a source region on a top surface of a first semiconductor fin of the pair of semiconductor fins is electrically coupled to a drain region on a top surface of a second semiconductor fin of the pair of semiconductor fins through the channel region of the semiconductor pillar.

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