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Gate-all around fin device

  • US 10,573,754 B2
  • Filed: 11/21/2017
  • Issued: 02/25/2020
  • Est. Priority Date: 11/19/2014
  • Status: Active Grant
First Claim
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1. A structure comprising:

  • a first doped fin of a first conductivity type located over a first portion of a doped well;

    a second doped fin of a second conductivity type located over a second portion of the doped well;

    a gate structure located adjacent to the first doped fin over the doped well;

    a shallow trench isolation (STI) region in the doped well between the first portion and the second portion of the doped well; and

    a source contact located over the first doped fin,wherein the source contact includes alternating p regions and n regions.

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