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Semiconductor device

  • US 10,573,757 B2
  • Filed: 10/17/2018
  • Issued: 02/25/2020
  • Est. Priority Date: 09/15/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer;

    a first conductive layer over and in contact with the semiconductor layer;

    a second conductive layer over and in contact with the first conductive layer;

    an insulating layer over the second conductive layer; and

    a third conductive layer over the insulating layer,wherein a thickness of the second conductive layer is larger than a thickness of the first conductive layer,wherein the insulating layer comprises an opening,wherein a region of the first conductive layer exposed from the opening is in contact with the third conductive layer,wherein an end portion of the first conductive layer extends beyond an end portion of the second conductive layer, andwherein an angle between a side surface and a bottom surface of the first conductive layer is smaller than an angle between a side surface and a bottom surface of the second conductive layer.

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