Semiconductor device

• US 10,573,778 B2
• Filed: 01/15/2019
• Issued: 02/25/2020
• Est. Priority Date: 06/22/2017
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Chen, Chih-Hao, Chou, Yi-Lun, Peng, Wei-Chih
• Primary Examiner(s): Schoenholtz, J. E.
• Application Number:
  US16/247,802
• Publication Number:
  US 20190165206A1
• Time in Patent Office: 406 Days
• Field of Search: None
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector

Abstract

The present disclosure provides a semiconductor device including a carrier; a current blocking layer, formed on the carrier; a function structure, formed on the current blocking layer and comprising a surface opposite to the current blocking layer; a protective structure, formed on the function structure and exposing a portion of the surface; and an electrode, formed on the protective structure and exposing the portion of the surface.

Claims

1. A semiconductor device, comprising:

a carrier;

a current blocking layer, formed on the carrier;

a function structure, formed on the current blocking layer and comprising a surface opposite to the current blocking layer, wherein the function structure comprises a light-emitting structure emitting a light beam with a first peak wavelength in a first wavelength range of ultraviolet (UV) light;

a protective structure, formed on the function structure and exposing a portion of the surface; and

an electrode, formed on the protective structure, wherein the protective structure reflects the light beam away from the electrode.

2. The semiconductor device of claim 1, wherein the protective structure functions as a reflector having a high reflectivity in a second wavelength range of ultraviolet (UV) light.

3. The semiconductor device of claim 1, wherein the protective structure comprises a distributed Bragg reflector (DBR) structure.

4. The semiconductor device of claim 3, wherein the DBR structure comprises semiconductor pairs, each of the semiconductor pairs comprises a first semiconductor material layer having a first refractive index and a second semiconductor material layer having a second refractive index, the first refractive index being greater than the second refractive index.

5. The semiconductor device of claim 4, wherein the first semiconductor material layer comprises Al_xGa_1-xN (0.6≤

x≤

0.8), and the second semiconductor material layer comprises Al_yGa_1-yN (0.9≤

y≤

1).

6. The semiconductor device of claim 4, wherein the first refractive index and the second refractive index are between 2.0 and 2.5.

7. The semiconductor device of claim 1, wherein the electrode comprises a plurality of extending portions, formed respectively on the protective structure between the exposed portion of the surface.

8. The semiconductor device of claim 4, wherein a number of the semiconductor pairs is between 10 and 40.

9. The semiconductor device of claim 1, wherein the carrier comprises a conductive material.

10. The semiconductor device of claim 9, wherein the conductive material is selected from Si, SiC, W, Cu, Mo, and the combination thereof.

11. The semiconductor device of claim 1, further comprising a bonding layer formed between the carrier and the function structure.

12. The semiconductor device of claim 1, further comprising a contact layer formed between the carrier and the function structure.

13. The semiconductor device of claim 12, wherein a material of the contact layer comprises Ag.

14. The semiconductor device of claim 1, wherein a portion of the current blocking layer is not covered by the function structure.

15. The semiconductor device of claim 1, wherein a material of the current blocking layer comprises SiO₂.

16. The semiconductor device of claim 1, further comprising a passivation layer formed on the function structure and covering the portion of the surface exposed by the protective structure.

17. A semiconductor device, comprising:

a carrier;

a current blocking layer, formed on the carrier;

a function structure, formed on the current blocking layer and comprising a surface opposite to the current blocking layer;

a protective structure, formed on the function structure, and wherein the protective structure covers a portion of the surface; and

an electrode, formed on the protective structure,

wherein a portion of the current blocking layer is not covered by the function structure.

18. The semiconductor device of claim 17, further comprising a passivation layer formed on the function structure, covering the portion of the surface exposed by the electrode, and contact with the electrode.

19. The semiconductor device of claim 18, wherein the function structure comprises a light-emitting structure emitting a light beam with a first peak wavelength in a first wavelength range of ultraviolet (UV) light.