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Semiconductor device

  • US 10,573,778 B2
  • Filed: 01/15/2019
  • Issued: 02/25/2020
  • Est. Priority Date: 06/22/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a carrier;

    a current blocking layer, formed on the carrier;

    a function structure, formed on the current blocking layer and comprising a surface opposite to the current blocking layer, wherein the function structure comprises a light-emitting structure emitting a light beam with a first peak wavelength in a first wavelength range of ultraviolet (UV) light;

    a protective structure, formed on the function structure and exposing a portion of the surface; and

    an electrode, formed on the protective structure, wherein the protective structure reflects the light beam away from the electrode.

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