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Infrared light emitting device

  • US 10,573,782 B2
  • Filed: 12/13/2018
  • Issued: 02/25/2020
  • Est. Priority Date: 12/21/2017
  • Status: Active Grant
First Claim
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1. An infrared light emitting device comprising:

  • a semiconductor substrate;

    a first layer formed on the semiconductor substrate and having a first conductivity type;

    a light emitting layer formed on the first layer; and

    a second layer formed on the light emitting layer and having a second conductivity type, whereinthe first layer comprises, in the stated order;

    a layer containing Alx(1)In1−

    x(1)
    Sb;

    a layer having a film thickness ty(1) in nanometers and containing Aly(1)In1−

    y(1)
    Sb; and

    a layer containing Alx(2)In1−

    x(2)
    Sb,where ty(1), x(1), x(2), and y(1) satisfy the following relations;


    0<

    ty(1)

    2360×

    (y(1)−

    x(1))−

    240(0.1≤

    y(1)−

    x(1)≤

    0.19),
    0<

    ty(1)



    1215×

    (y(1)−

    x(1))+427(0.19<

    y(1)−

    x(1)≤

    0.33),
    0<

    ty(1)

    2360×

    (y(1)−

    x(2))−

    240(0.11≤

    y(1)−

    x(2)≤

    0.19),
    0<

    ty(1)



    1215×

    (y(1)−

    x(2))+427(0.19<

    y(1)−

    x(2)≤

    0.33),
    0<

    x(1)<

    0.18, and
    0<

    x(2)<

    0.18.

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