Image sensor and electronic camera
First Claim
1. An image sensor comprising:
- a first semiconductor layer provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit;
a second semiconductor layer provided with a supply unit that supplies the transfer unit with a transfer signal for transferring the electric charge from the photoelectric conversion unit to the accumulation unit; and
a third semiconductor layer into which a signal is inputted, the signal being based on the electric charge that has been transferred to the accumulation unit.
1 Assignment
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Accused Products
Abstract
An image sensor includes a first semiconductor layer provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, a second semiconductor layer provided with a supply unit that supplies the transfer unit with a transfer signal for transferring the electric charge from the photoelectric conversion unit to the accumulation unit, and a third semiconductor layer into which a signal is inputted, the signal being based on the electric charge that has been transferred to the accumulation unit.
12 Citations
15 Claims
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1. An image sensor comprising:
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a first semiconductor layer provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit; a second semiconductor layer provided with a supply unit that supplies the transfer unit with a transfer signal for transferring the electric charge from the photoelectric conversion unit to the accumulation unit; and a third semiconductor layer into which a signal is inputted, the signal being based on the electric charge that has been transferred to the accumulation unit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An image sensor comprising:
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a first semiconductor layer provided with a pixel including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit; and a semiconductor layer that is arranged to be stacked on the first semiconductor substrate, in which a supply unit is provided, the supply unit supplying the transfer unit with a transfer signal for transferring the electric charge from the photoelectric conversion unit to the accumulation unit.
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15. An image sensor comprising:
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a first semiconductor substrate having an insulating unit formed therein and having a preset predetermined substrate voltage; an photoelectric conversion unit that is provided in the first semiconductor substrate and photoelectrically converts incident light to generate an electric charge; a transfer unit that is provided in the first semiconductor substrate and transfers the electric charge generated by the photoelectric conversion unit to an accumulation unit based on a transfer signal; and a supply unit that is electrically insulated from the first semiconductor substrate by the insulating unit, the supply unit supplying the transfer unit with the transfer signal including a first positive signal voltage and a second negative signal voltage.
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Specification