Ebeam universal cutter
First Claim
1. A column for e-beam tool, the column comprising:
- an electron source for providing a beam of electrons;
a limiting aperture coupled with the electron source along a pathway of the beam of the beam of electrons;
high aspect ratio illumination optics coupled with the limiting aperture along the pathway of the beam of the beam of electrons;
a shaping aperture coupled with the high aspect ratio illumination optics along the pathway of the beam of the beam of electrons;
a blanker aperture array (BAA) coupled with the shaping aperture along the pathway of the beam of the beam of electrons, the BAA comprising;
a first array of openings along a first direction; and
a second array of openings along the first direction and staggered from the first array of openings, the first and second arrays of openings together forming an array having a pitch in the first direction; and
a final aperture coupled with the BAA along the pathway of the beam of the beam of electrons; and
a sample stage for receiving the beam of electrons, wherein a scan direction of the sample stage is along a second direction, orthogonal to the first direction of the BAA, and wherein the pitch of the array of the BAA corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.
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Accused Products
Abstract
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.
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Citations
17 Claims
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1. A column for e-beam tool, the column comprising:
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an electron source for providing a beam of electrons; a limiting aperture coupled with the electron source along a pathway of the beam of the beam of electrons; high aspect ratio illumination optics coupled with the limiting aperture along the pathway of the beam of the beam of electrons; a shaping aperture coupled with the high aspect ratio illumination optics along the pathway of the beam of the beam of electrons; a blanker aperture array (BAA) coupled with the shaping aperture along the pathway of the beam of the beam of electrons, the BAA comprising; a first array of openings along a first direction; and a second array of openings along the first direction and staggered from the first array of openings, the first and second arrays of openings together forming an array having a pitch in the first direction; and a final aperture coupled with the BAA along the pathway of the beam of the beam of electrons; and a sample stage for receiving the beam of electrons, wherein a scan direction of the sample stage is along a second direction, orthogonal to the first direction of the BAA, and wherein the pitch of the array of the BAA corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A column for e-beam tool, the column comprising:
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an electron source for providing a beam of electrons; a blanker aperture array (BAA), comprising; a first array of openings along a first direction; and a second array of openings along the first direction and staggered from the first array of openings, the first and second arrays of openings together forming an array having a pitch in the first direction; and a sample stage for receiving the beam of electrons, wherein a scan direction of the sample stage is along a second direction, orthogonal to the first direction of the BAA, and wherein the pitch of the array of the BAA corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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Specification