Semiconductor element

• US 10,580,568 B2
• Filed: 07/13/2017
• Issued: 03/03/2020
• Est. Priority Date: 08/05/2016
• Status: Active Grant

• Current Assignee: Realtek Semiconductor Corp.
• Original Assignee: Realtek Semiconductor Corp.
• Inventors: Yen, Hsiao-Tsung, Luo, Cheng-Wei, Jean, Yuh-Sheng, Yeh, Ta-Hsun
• Primary Examiner(s): Enad, Elvin G
• Assistant Examiner(s): Hossain, Kazi S
• Application Number:
  US15/649,503
• Publication Number:
  US 20180040413A1
• Time in Patent Office: 964 Days
• Field of Search: 336184, 336200, 336223, 336232, 336182, 336180
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 19/04 Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range resonant circuits H03H
• CPC Class Codes: H01F 2017/0046 with a conductive path having a bridge
• CPC Class Codes: H01F 2017/0073 with a special conductive pattern, e.g. flat spiral
• CPC Class Codes: H01F 2017/0086 on semiconductor substrate inductors for integrated circuits H01L28/10
• CPC Class Codes: H01F 2027/2809 on stacked layers
• CPC Class Codes: H01F 27/2804 Printed windings
• CPC Class Codes: H01F 27/29 Terminals; Tapping arrangements for signal inductances
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 28/10 Inductors

Abstract

A semiconductor element includes a first spiral coil, a second spiral coil, a connecting section, a first guide segment, and a second guide segment. The first spiral coil is formed with a first end and a second end, and includes a first inner turn and a first outer turn. The first inner turn is located in a range surrounded by the outer turn, and the first end and the second end are located at the first inner turn. The second spiral coil and the first spiral coil are located in substantially a same metal layer. The connecting section connects the first spiral coil and the second spiral coil. The first guide segment is connected to the first end. The second guide segment is connected to the second end. The first guide segment and the second guide segment are fabricated in a metal layer different from a metal layer of the first spiral coil.

Claims

1. A semiconductor element, comprising:

a first spiral coil, formed with a first end and a second end and comprising a first inner turn and a first outer turn, wherein said first inner turn is surrounded by said first outer turn, and said first end and said second end are located at said first inner turn;

a second spiral coil, wherein said second spiral coil and said first spiral coil are located at substantially a same metal layer;

a connecting section, connecting said first spiral coil and said second spiral coil, and comprising a first connecting segment located in a first metal layer and a second connecting segment located in a second metal layer, wherein said first connecting segment and said second connecting segment are substantially parallel to each other and substantially overlap;

a first guide segment, connected to said first end; and

a second guide segment, connected to said second end;

wherein, said first guide segment and said second guide segment are fabricated in a metal layer different from a metal layer of said first spiral coil.

2. The semiconductor element of claim 1, wherein a range surrounded by said first inner turn does not overlap with said first guide segment and said second guide segment, and a range surrounded by said second spiral coil does not overlap with said first guide segment and said second guide segment.

3. The semiconductor element of claim 1, wherein said second spiral coil comprises a second inner turn and a second outer turn, said second inner turn is located in a range surrounded by said second outer turn, and said connecting section connects said first outer turn and said second outer turn.

4. The semiconductor element of claim 1, wherein said semiconductor element is an integrated transformer, said second spiral coil comprises a third end and a fourth end, said first end and said second end form one of an input port and an output port of said integrated transformer, and said third end and said fourth end form the other of said input port and said output port.

5. A semiconductor element, comprising:

a first spiral coil, formed with a first end and a second end and comprising a first inner turn and a first outer turn, wherein said first inner turn is surrounded by said first outer turn, and said first end and said second end are located at said first inner turn;

a second spiral coil, wherein said second spiral coil and said first spiral coil are located at substantially a same metal layer;

a connecting section, connecting said first spiral coil and said second spiral coil, and comprising a first connecting segment located in a first metal layer and a second connecting segment located in a second metal layer, wherein said first connecting segment and said second connecting segment are substantially parallel to each other and substantially overlap;

a first guide segment, connected to said first end; and

a second guide segment, connected to said second end;

wherein, said first guide segment and said second guide segment are fabricated in a metal layer different from a metal layer of said first spiral coil;

wherein, said first guide segment and said second guide segment partially overlap a range surrounded by said first inner turn, and do not partially overlap a range surrounded by said second spiral coil.