Atomic layer etch process using plasma in conjunction with a rapid thermal activation process

• US 10,580,661 B2
• Filed: 05/01/2017
• Issued: 03/03/2020
• Est. Priority Date: 12/14/2016
• Status: Active Grant

• Current Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area), BeiJing E-Town Semiconductor Technology Co., Ltd.
• Original Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area)
• Inventors: Ma, Shawming
• Primary Examiner(s): Norton, Nadine G
• Assistant Examiner(s): Dahimene, Mahmoud
• Application Number:
  US15/582,896
• Publication Number:
  US 20180166296A1
• Time in Patent Office: 1,037 Days
• CPC Class Codes: H01J 2237/2001 Maintaining constant desired temperature
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32422 Arrangement for selecting ions or species in the plasma
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32724 Temperature
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/31138 by dry-etching

Abstract

A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films. In accordance with the present disclosure, a reactive species generated from a plasma is contacted with a surface of the film layer. Simultaneously, the substrate or semiconductor wafer is subjected to rapid thermal heating cycles that increase the temperature past the activation temperature of the reaction in a controlled manner.

Claims

1. A process for etching a layer on a semiconductor wafer comprising:

placing a semiconductor wafer in a processing chamber, the semiconductor wafer including a film layer;

generating a plasma from an etchant gas, the plasma containing a reactive species;

contacting the film layer with the reactive species; and

exposing the semiconductor wafer to a plurality of thermal cycles while being contacted with the reactive species to etch the film layer;

wherein at least one surface of the semiconductor wafer comprises the film layer, wherein each of the plurality of thermal cycles is configured to increase a temperature of the at least one surface to reach a first temperature at a first rate, and is further configured to further increase the temperature of the at least one surface to reach a second temperature at a second rate, after reaching the second temperature, each of the plurality of thermal cycles is further configured to cool the at least one surface to a third temperature at a third rate, wherein the second rate is greater than the first rate, the second temperature is greater than the first and third temperatures, wherein the reactive species etches the at least one surface to at least partially remove an amount of the film layer at least at the first and second temperatures;

wherein the plurality of thermal cycles produces an overall nonlinear etch rate such that each of the plurality of thermal cycles increases an etch amount of the film layer in a curvilinear manner.

2. A process as defined in claim 1, wherein the film layer contains carbon.

3. A process as defined in claim 1, wherein the film layer comprises a dielectric layer having a low dielectric constant.

4. A process as defined in claim 1, wherein each of the plurality of thermal cycles is produced by a plurality of lamps.

5. A process as defined in claim 4, wherein the film layer is exposed to the plurality of thermal cycles, each of the plurality of thermal cycles comprising a pulse of light energy.

6. A process as defined in claim 1, wherein the film layer comprises a photoresist layer or a hardmask layer.

7. A process as defined in claim 1, wherein the film layer comprises an atomic layer.

8. A process as defined in claim 1, wherein each thermal cycle has a cycle time of from 1 ms to about 10 s.

9. A process as defined in claim 1, wherein the etchant gas comprises molecular oxygen, molecular nitrogen, argon, molecular hydrogen, water, hydrogen peroxide, carbon dioxide, sulfur dioxide, methane, carbonyl sulfide, fluoroform (trifluoromethane), tetrafluoromethane, or mixtures thereof.

10. A process as defined in claim 1, wherein the film layer contains amorphous carbon.

11. A process as defined in claim 1, wherein the plasma is generated in a plasma chamber and is fed through a filter structure prior to contacting the film layer.

12. A process as defined in claim 1, wherein the semiconductor wafer is heated to a temperature of from about 100°

C. to about 300°

C.

13. A process as defined in claim 11, wherein the filter structure includes openings that allow reactive species to pass but filter out at least 65% of charged species contained within the plasma, the reactive species comprising neutral particles.

14. A process as defined in claim 11, wherein the filter structure includes openings that allow reactive species to pass but filter out at least 85% of charged species contained within the plasma, the reactive species comprising neutral particles.

15. A process as defined in claim 1, wherein the first temperature is greater than about 80°

C.

16. A process as defined in claim 5, wherein the plurality of thermal cycles have different cycle times.

17. A process as defined in claim 5, wherein the temperature of the semiconductor wafer is increased in a nonlinear manner.

18. A process as defined in claim 1, wherein the reactive species are introduced into the chamber opposite a top surface of the semiconductor wafer and wherein each of the plurality of thermal cycles is produced by a plurality of lamps located below the semiconductor wafer.