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Atomic layer etch process using plasma in conjunction with a rapid thermal activation process

  • US 10,580,661 B2
  • Filed: 05/01/2017
  • Issued: 03/03/2020
  • Est. Priority Date: 12/14/2016
  • Status: Active Grant
First Claim
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1. A process for etching a layer on a semiconductor wafer comprising:

  • placing a semiconductor wafer in a processing chamber, the semiconductor wafer including a film layer;

    generating a plasma from an etchant gas, the plasma containing a reactive species;

    contacting the film layer with the reactive species; and

    exposing the semiconductor wafer to a plurality of thermal cycles while being contacted with the reactive species to etch the film layer;

    wherein at least one surface of the semiconductor wafer comprises the film layer, wherein each of the plurality of thermal cycles is configured to increase a temperature of the at least one surface to reach a first temperature at a first rate, and is further configured to further increase the temperature of the at least one surface to reach a second temperature at a second rate, after reaching the second temperature, each of the plurality of thermal cycles is further configured to cool the at least one surface to a third temperature at a third rate, wherein the second rate is greater than the first rate, the second temperature is greater than the first and third temperatures, wherein the reactive species etches the at least one surface to at least partially remove an amount of the film layer at least at the first and second temperatures;

    wherein the plurality of thermal cycles produces an overall nonlinear etch rate such that each of the plurality of thermal cycles increases an etch amount of the film layer in a curvilinear manner.

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