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Semiconductor device and manufacturing method of the same

  • US 10,580,797 B2
  • Filed: 06/20/2016
  • Issued: 03/03/2020
  • Est. Priority Date: 05/16/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprisinga first conductive layer;

  • a second conductive layer;

    a light-transmitting pixel electrode;

    an oxide semiconductor layer;

    a first insulating film; and

    a second insulating film,wherein the first conductive layer is electrically connected with the oxide semiconductor layer and is designed to work as a source electrode of a transistor and a source wiring,wherein the second conductive layer and the oxide semiconductor layer overlap with each other with the first insulating film therebetween, and the second conductive layer is designed to work as a gate electrode of the transistor and a gate wiring,wherein the light-transmitting pixel electrode is over the second insulating film and electrically connected to the oxide semiconductor layer,wherein the first conductive layer comprises a first light-transmitting conductive layer and a first light-shielding conductive layer over the first light-transmitting conductive layer,wherein the second insulating film is in direct contact with a side surface of the first light-transmitting conductive layer in a region overlapping with each of oxide semiconductor layer and the second conductive layer,wherein the second conductive layer comprises a second light-transmitting conductive layer and a second light-shielding conductive layer over the second light-transmitting conductive layer,wherein the first light-shielding conductive layer recedes from any side edge of the first light-transmitting conductive layer so that a part of a top surface of the first conductive oxide layer which is adjacent to the side surface is not covered by the first light-shielding conductive layer,wherein the second light-shielding conductive layer does not extend beyond any side edge of the second light-transmitting conductive layer,wherein the first light-transmitting conductive layer extends beyond side edges of the first light-shielding conductive layer,wherein the second light-transmitting conductive layer extends beyond side edges of the second light-shielding conductive layer,wherein the first light-transmitting conductive layer is in direct contact with the oxide semiconductor layer, andwherein the first light-shielding conductive layer does not directly contact with the oxide semiconductor layer.

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