Semiconductor device and manufacturing method of the same

• US 10,580,797 B2
• Filed: 06/20/2016
• Issued: 03/03/2020
• Est. Priority Date: 05/16/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime
• Primary Examiner(s): Woldegeorgis, Ermias T
• Application Number:
  US15/186,692
• Publication Number:
  US 20160300862A1
• Time in Patent Office: 1,352 Days
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors

Abstract

An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included.

Claims

1. A semiconductor device comprising

a first conductive layer;

a second conductive layer;

a light-transmitting pixel electrode;

an oxide semiconductor layer;

a first insulating film; and

a second insulating film,

wherein the first conductive layer is electrically connected with the oxide semiconductor layer and is designed to work as a source electrode of a transistor and a source wiring,

wherein the second conductive layer and the oxide semiconductor layer overlap with each other with the first insulating film therebetween, and the second conductive layer is designed to work as a gate electrode of the transistor and a gate wiring,

wherein the light-transmitting pixel electrode is over the second insulating film and electrically connected to the oxide semiconductor layer,

wherein the first conductive layer comprises a first light-transmitting conductive layer and a first light-shielding conductive layer over the first light-transmitting conductive layer,

wherein the second insulating film is in direct contact with a side surface of the first light-transmitting conductive layer in a region overlapping with each of oxide semiconductor layer and the second conductive layer,

wherein the second conductive layer comprises a second light-transmitting conductive layer and a second light-shielding conductive layer over the second light-transmitting conductive layer,

wherein the first light-shielding conductive layer recedes from any side edge of the first light-transmitting conductive layer so that a part of a top surface of the first conductive oxide layer which is adjacent to the side surface is not covered by the first light-shielding conductive layer,

wherein the second light-shielding conductive layer does not extend beyond any side edge of the second light-transmitting conductive layer,

wherein the first light-transmitting conductive layer extends beyond side edges of the first light-shielding conductive layer,

wherein the second light-transmitting conductive layer extends beyond side edges of the second light-shielding conductive layer,

wherein the first light-transmitting conductive layer is in direct contact with the oxide semiconductor layer, and

wherein the first light-shielding conductive layer does not directly contact with the oxide semiconductor layer.

2. The semiconductor device according to claim 1, wherein the first light-transmitting conductive layer comprises indium and zinc.

3. The semiconductor device according to claim 1, wherein the first light-shielding conductive layer comprises copper.

4. The semiconductor device according to claim 1, wherein the first light-shielding conductive layer does not overlap with the oxide semiconductor layer.

5. The semiconductor device according to claim 1,

wherein the second light-shielding conductive layer does not overlap with the oxide semiconductor layer.

6. The semiconductor device according to claim 1, further comprises a third light-transmitting conductive layer,

wherein the third light-transmitting conductive layer is in direct contact with the light-transmitting pixel electrode,

wherein the third light-transmitting conductive layer is in direct contact with the oxide semiconductor layer so as to work as a drain electrode of the transistor, and

wherein the semiconductor device is configured to allow light to pass through the light-transmitting pixel electrode, the third light-transmitting conductive layer and the oxide semiconductor layer.

7. The semiconductor device according to claim 1,

wherein the second conductive layer is located below the oxide semiconductor layer.

8. The semiconductor device according to claim 1, further comprising:

a contact hole formed in the second insulating film; and

a third light-shielding conductive layer,

wherein an entity of the contact hole overlaps with the third light-shielding conductive layer, and

wherein the light-transmitting pixel electrode covers the contact hole.

9. A semiconductor device comprising

a first conductive layer;

a second conductive layer;

a light-transmitting pixel electrode;

an oxide semiconductor layer;

a first insulating film; and

a second insulating film,

wherein the first conductive layer is electrically connected with the oxide semiconductor layer and is designed to work as a source electrode of a transistor and a source wiring,

wherein the second conductive layer and the oxide semiconductor layer overlap with each other with the first insulating film therebetween, and the second conductive layer is designed to work as a gate electrode of the transistor and a gate wiring,

wherein the light-transmitting pixel electrode is over the second insulating film and electrically connected to the oxide semiconductor layer,

wherein a portion of the first conductive layer that overlaps with the second conductive layer overlaps with the oxide semiconductor layer,

wherein the first conductive layer comprises a first light-transmitting conductive layer and a first light-shielding conductive layer over the first light-transmitting conductive layer,

wherein the second insulating film is in direct contact with a side surface of the first light-transmitting conductive layer in a region overlapping with each of oxide semiconductor layer and the second conductive layer,

wherein the second conductive layer comprises a second light-transmitting conductive layer and a second light-shielding conductive layer over the second light-transmitting conductive layer,

wherein the first light-shielding conductive layer recedes from any side edge of the first light-transmitting conductive layer so that a part of a top surface of the first conductive oxide layer which is adjacent to the side surface is not covered by the first light-shielding conductive layer,

wherein the second light-shielding conductive layer does not extend beyond any side edge of the second light-transmitting conductive layer, wherein the first light-transmitting conductive layer extends beyond side edges of the first light-shielding conductive layer,

wherein the second light-transmitting conductive layer extends beyond side edges of the second light-shielding conductive layer,

wherein the first light-transmitting conductive layer is in direct contact with the oxide semiconductor layer, and

wherein the first light-shielding conductive layer does not directly contact with the oxide semiconductor layer.

10. The semiconductor device according to claim 9, wherein the first light-transmitting conductive layer comprises indium and zinc.

11. The semiconductor device according to claim 9, wherein the first light-shielding conductive layer comprises copper.

12. The semiconductor device according to claim 9, wherein the first light-shielding conductive layer does not overlap with the oxide semiconductor layer.

13. The semiconductor device according to claim 9,

wherein the second light-shielding conductive layer does not overlap with the oxide semiconductor layer.

14. The semiconductor device according to claim 9, further comprises a third light-transmitting conductive layer,

wherein the third light-transmitting conductive layer is in direct contact with the light-transmitting pixel electrode,

wherein the third light-transmitting conductive layer is in direct contact with the oxide semiconductor layer so as to work as a drain electrode of the transistor, and

wherein the semiconductor device is configured to allow light to pass through the light-transmitting pixel electrode, the third light-transmitting conductive layer and the oxide semiconductor layer.

15. The semiconductor device according to claim 9,

wherein the second conductive layer is located below the oxide semiconductor layer.

16. The semiconductor device according to claim 9, further comprising:

a contact hole formed in the second insulating film; and

a third light-shielding conductive layer,

wherein an entity of the contact hole overlaps with the third light-shielding conductive layer, and

wherein the light-transmitting pixel electrode covers the contact hole.

17. A semiconductor device comprising:

a source wiring comprising a first light-transmitting conductive layer and a first light-shielding conductive layer formed on the first light-transmitting conductive layer;

a gate wiring comprising a second light-transmitting conductive layer and a second light-shielding conductive layer formed on the second light-transmitting conductive layer; and

a pixel defined by an intersection between the gate wiring and the source wiring, the pixel comprising;

a gate electrode;

a first insulating film adjacent to the gate electrode;

an oxide semiconductor layer adjacent to the gate electrode with the first insulating film interposed therebetween;

a source electrode in contact with the oxide semiconductor layer, the source electrode comprising the first light-transmitting conductive layer, and

a light-transmitting pixel electrode over a second insulating film electrically connected to the oxide semiconductor layer,

wherein the first light-transmitting conductive layer extends beyond side edges of the first light-shielding conductive layer,

wherein the second insulating film is in direct contact with a side surface of the first light-transmitting conductive layer in a region overlapping with each of oxide semiconductor layer and the second conductive layer,

wherein the first light-shielding conductive layer recedes from any side edge of the first light-transmitting conductive layer so that a part of a top surface of the first conductive oxide layer which is adjacent to the side surface is not covered by the first light-shielding conductive layers, and

wherein the source electrode is configured to allow light to pass through the source electrode in a thickness direction thereof.

18. The semiconductor device according to claim 17,

wherein the second light-transmitting conductive layer extends beyond side edges of the second light-shielding conductive layer, and

wherein the second light-shielding conductive layer does not extend beyond any side edge of the second light-transmitting conductive layer.

19. The semiconductor device according to claim 17, wherein the gate electrode is located over the oxide semiconductor layer.

20. The semiconductor device according to claim 17, wherein the gate electrode is located below the oxide semiconductor layer.

21. The semiconductor device according to claim 17, further comprising:

a drain electrode in contact with the oxide semiconductor layer, the drain electrode comprising a third light-transmitting conductive layer; and

the first insulating film over the drain electrode,

wherein the light-transmitting pixel electrode is electrically connected to the oxide semiconductor layer through the drain electrode, and

wherein the drain electrode is configured to allow light to pass through the drain electrode in a thickness direction thereof.

22. The semiconductor device according to claim 17, further comprising:

a capacitor wiring comprising a third light-transmitting conductive layer and a third light-shielding conductive layer formed on the third light-transmitting conductive layer; and

a storage capacitor capable of transmitting light, the storage capacitor being electrically connected to the oxide semiconductor layer and comprising the third light-transmitting conductive layer,

wherein the third light-transmitting conductive layer extends beyond side edges of the third light-shielding conductive layer, and

wherein the capacitor wiring and the gate wiring are formed on a same insulating surface.

23. The semiconductor device according to claim 17, wherein the gate electrode is capable of transmitting light in a thickness direction thereof.