Semiconductor device
First Claim
1. A semiconductor device comprising:
- a semiconductor layer in which a first trench having a side surface and a bottom surface and a second trench having a side surface and a bottom surface are formed;
a first conductivity layer of a first conductivity type that is exposed from a surface of the semiconductor layer and that forms the side surface of the first trench and the side surface of the second trench;
a second conductivity layer of a second conductivity type that is disposed on a back surface side of the semiconductor layer with respect to the first conductivity layer such that the second conductivity layer is in contact with the first conductivity layer, and that forms a part of the side surface of the first trench and a part of the side surface of the second trench;
a third conductivity layer of the first conductivity type that is disposed on the back surface side of the semiconductor layer with respect to the second conductivity layer such that the third conductivity layer is in contact with the second conductivity layer, and that forms the bottom surface of the first trench and the bottom surface of the second trench;
a first electrode that is embedded in the first trench;
a first insulating film disposed between the side and bottom surfaces of the first trench and the first electrode;
a second electrode that is embedded in the second trench and that is electrically connected to the first conductivity layer;
a third electrode that is electrically connected to the third conductivity layer; and
a breakdown voltage holding layer that is formed in the semiconductor layer and that forms the side and bottom surfaces of the second trench.
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Accused Products
Abstract
The semiconductor device includes: a semiconductor layer in which a trench is formed having a side surface and a bottom surface; a second conductivity-type layer formed on the semiconductor layer on the side surface and the bottom surface of the trench; a first conductivity-type layer formed on the semiconductor layer so as to contact the second conductivity-type layer; a first electrode electrically connected to the first conductivity-type layer; a second electrode embedded in the trench and electrically connected to the second conductivity-type layer; and a barrier-forming layer which is arranged between the second electrode and the side surface of the trench and which, between said barrier-forming layer and the second conductivity-type layer, forms a potential barrier higher than the potential barrier between the second conductivity-type layer and the second electrode.
21 Citations
20 Claims
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1. A semiconductor device comprising:
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a semiconductor layer in which a first trench having a side surface and a bottom surface and a second trench having a side surface and a bottom surface are formed; a first conductivity layer of a first conductivity type that is exposed from a surface of the semiconductor layer and that forms the side surface of the first trench and the side surface of the second trench; a second conductivity layer of a second conductivity type that is disposed on a back surface side of the semiconductor layer with respect to the first conductivity layer such that the second conductivity layer is in contact with the first conductivity layer, and that forms a part of the side surface of the first trench and a part of the side surface of the second trench; a third conductivity layer of the first conductivity type that is disposed on the back surface side of the semiconductor layer with respect to the second conductivity layer such that the third conductivity layer is in contact with the second conductivity layer, and that forms the bottom surface of the first trench and the bottom surface of the second trench; a first electrode that is embedded in the first trench; a first insulating film disposed between the side and bottom surfaces of the first trench and the first electrode; a second electrode that is embedded in the second trench and that is electrically connected to the first conductivity layer; a third electrode that is electrically connected to the third conductivity layer; and a breakdown voltage holding layer that is formed in the semiconductor layer and that forms the side and bottom surfaces of the second trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification